备用零件
Price @ 1000
$ 0.22
$ 0.132
Stock
98,463
150,755
Authorized Distributors
2
2
Mount
Through Hole
-
Case/Package
TO-251-3
-
Drain to Source Voltage (Vdss)
600 V
-
Continuous Drain Current (ID)
900 mA
900 mA
Threshold Voltage
-
-
Rds On Max
12 Ω
-
Gate to Source Voltage (Vgs)
-
30 V
Power Dissipation
-
2.5 W
Input Capacitance
215 pF
-
供应链
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2001-05-18
Lifecycle StatusObsolete (Last Updated: 4 months ago)
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MOSFET N-CH 700V 4A TO251-3 / N-Channel 700 V 4A (Tc) 42W (Tc) Through Hole PG-TO251-3-11
描述
由其分销商提供的 onsemi SSU1N60BTU-WS 的描述。
Power Field-Effect Transistor, 0.9A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
N-CH/600V/0.9A/12OHM/Substitute of SSU1N60ATU & SSU1N60TU
TRANS MOSFET N-CH 600V 0.9A 3-PIN(3+TAB) IPAK RAIL
SSU1N60BTU_WS Fairchild/ON Semiconductor
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Case/PackageTO-251-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)900 mA
Drain to Source Resistance12 Ω
Drain to Source Voltage (Vdss)600 V
Input Capacitance215 pF
Max Operating Temperature150 °C
Max Power Dissipation28 W
Min Breakdown Voltage600 V
Min Operating Temperature-55 °C
Number of Elements1
Rds On Max12 Ω