STMicroelectronics STD1NK60-1

Name: STMicroelectronics STD1NK60-1
Brand: STMicroelectronics
SKU: STD1NK60-1

STD1NK60-1 N-channel Mosfet Transistor, 1 A, 600 V, 3-PIN TO-252

$ 0.446

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Distributor		SKU		Min	Pkg
Arrow Electronics		STD1NK60-1	18,410	1		0.301	0.301	0.292	0.273	0.264
Verical		STD1NK60-1	18,390	30				0.291	0.272	0.263
TME	2	STD1NK60-1	256	1		0.930	0.474	0.419	0.333	0.292	8h
DigiKey		497-12782-5-ND	740	1	Tube	1.750	1.750	0.777	0.580	0.444
RS (Formerly Allied Electronics)		STD1NK60-1	0	5	Bulk		0.600	0.540	0.540	0.540	2h

数据表和文档

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Newark

Datasheet15 页20 年前

Future Electronics

TME

库存历史记录

3 个月趋势:

-24.48%

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供应链

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date1980-01-04

Lifecycle StatusProduction (Last Updated: 4 months ago)

描述

由其分销商提供的 STMicroelectronics STD1NK60-1 的描述。

STD1NK60-1 N-CHANNEL MOSFET TRANSISTOR, 1 A, 600 V, 3-PIN TO-252

RS (Formerly Allied Electronics)

N-channel 600 V, 7.3 Ohm typ., 1 A SuperMESH Power MOSFET in IPAK package

Ciiva

N-CHANNEL 600V-8 OHM-1A IPAK SUPERMESH POWER MOSFET Power Field-Effect Transistor, 1A I(D), 600V, 8.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA

ComSIT Distribution GmbH

MOSFET, N CH, 600V, 1A, IPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:500mA; Drain Source Voltage Vds:600V; On Resistance Rds(on):8ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:30W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:I-PAK; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:1A; Package / Case:IPAK; Power Dissipation Pd:30W; Termination Type:Through Hole; Transistor Type:Power MOSFET; Voltage Vds Typ:600V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V

element14 APAC