onsemi FQU1N60CTU

Name: onsemi FQU1N60CTU
Brand: onsemi
SKU: FQU1N60CTU

Power Mosfet, N-channel, Qfet®, 600 V, 1 A, 11.5 Ω, Ipak

$ 0.237

Obsolete

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价格与库存

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Distributor		SKU		Min
Verical	8	FQU1N60CTU	16,660	1266				0.264
Avnet		FQU1N60CTU	2,320	3847					2d
Rochester Electronics	2	FQU1N60CTU	441,118			0.286	0.237	0.211	20h
Flip Electronics		FQU1N60CTU	2,320						>1wk
Farnell		FQU1N60CTU	0	5	0.593*	0.339*	0.273*	0.267*	20h

数据表和文档

下载 onsemi FQU1N60CTU 的数据表和制造商文档。

IHS

Datasheet9 页12 年前

Datasheet0 页0 年前

onsemi

Fairchild Semiconductor

element14 APAC

DigiKey

库存历史记录

3 个月趋势:

-5.19%

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供应链

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date2003-12-03

Lifecycle StatusObsolete (Last Updated: 5 days ago)

LTB Date2022-12-30

LTD Date2023-06-30

Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 5 days ago)

描述

由其分销商提供的 onsemi FQU1N60CTU 的描述。

Power MOSFET, N-Channel, QFET®, 600 V, 1 A, 11.5 Ω, IPAK

onsemi

N-Channel 600 V 11.5 Ohm Through Hole Mosfet -TO-251AA

Future Electronics

N-CHANNEL QFET MOSFET Power Field-Effect Transistor, 1A I(D), 600V, 3.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA

ComSIT Distribution GmbH

MOSFET, N-CH, 600V, 1A, TO-251AA-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 1A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 2.8ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Powe

Farnell

These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.