onsemi SSU1N60BTU
$ 0.132
Obsolete
供应链
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2001-05-18
Lifecycle StatusObsolete (Last Updated: 4 months ago)
相关零件
onsemiSSR1N60BTM-WS
Power Field-Effect Transistor, 0.9A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
InfineonIRF5802TRPBF
150V Single N-Channel HEXFET Power MOSFET in a TSOP-6 (Micro 6) package, TSOP6L, RoHS
描述
由其分销商提供的 onsemi SSU1N60BTU 的描述。
Power Field-Effect Transistor, 0.9A I(D), 600V, 12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251
N-CH/600V/0.9A/12OHM/SUBSTITUTE OF SSU1N60ATU & SSU1N60TU
N-CHANNEL POWER MOSFET
MISCELLANEOUS MOSFETS;
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Number of Terminals3
Technical
Continuous Drain Current (ID)900 mA
Drain to Source Breakdown Voltage600 V
Drain to Source Resistance12 Ω
Element ConfigurationSingle
Fall Time35 ns
Gate to Source Voltage (Vgs)30 V
Max Operating Temperature150 °C
Max Power Dissipation28 W
Min Breakdown Voltage600 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation2.5 W
Resistance12 Ω
Rise Time45 ns
Turn-Off Delay Time25 ns