供应链
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2013-10-09
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2016-01-24
LTD Date2016-07-24
相关零件
STMicroelectronicsSTU1HN60K3
N-channel 600 V, 6.4 Ohm typ., 1.2 A, SuperMESH3(TM) Power MOSFET in IPAK package
onsemiSSU1N60BTU-WS
Power Field-Effect Transistor, 0.9A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
描述
由其分销商提供的 onsemi SFT1458-H 的描述。
N-Channel Power MOSFET, 600V, 1.0A, 13Ω, Single TP/TP-FA
Tube Through Hole N-Channel MOSFET (Metal Oxide) Mosfet Transistor 1A Ta 1A 1W Ta 38W Tc 60ns
Trans MOSFET N-CH 600V 1A 3-Pin IPAK Bag
Small Signal Field-Effect Transistor
SFT1458-H, SINGLE BIPOLAR TRANSISTORS;
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Case/PackageTO-251-3
Contact PlatingTin Bismuth
MountThrough Hole
Number of Pins3
Technical
Continuous Drain Current (ID)1 A
Drain to Source Voltage (Vdss)600 V
Fall Time60 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance65 pF
Max Operating Temperature150 °C
Max Power Dissipation1 W
Min Operating Temperature-55 °C
Number of Channels1
Rds On Max13 Ω
Rise Time11 ns
Turn-Off Delay Time12 ns
Turn-On Delay Time6 ns