Infineon IPD068N10N3GATMA1

Name: Infineon IPD068N10N3GATMA1
Brand: Infineon
SKU: IPD068N10N3GATMA1

150W 20V 2.7V 51NC N Mosfet 100V 6.8M¦¸@ 10V 90£¨TC=25¡ÃC£©, 72£¨TC=100¡ÃC£© 3.69NF@ 50V TO-252

$ 0.962

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Distributor		SKU		Min	Pkg
Newark	2	IPD068N10N3GATMA1	186	5	Cut Tape		1.400	1.400	1.400	1.400
Arrow Electronics	3	IPD068N10N3GATMA1	9,740	1		0.989	0.989	0.989	0.989	0.989
Future Electronics	2	IPD068N10N3GATMA1	2,500	2500	Tape & Reel					1.080
Rutronik		TMOS1193	2,500	2500						0.828	11h
Rochester Electronics		IPD068N10N3GATMA1	13,251					1.140	0.946	0.844	3h

数据表和文档

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IHS

Datasheet9 页11 年前

_legacy Avnet

iiiC

库存历史记录

3 个月趋势:

-13.91%

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供应链

Country of OriginMalaysia, South Korea

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2008-10-21

Lifecycle StatusProduction (Last Updated: 2 weeks ago)

LTB Date2016-04-30

LTD Date2016-10-31

描述

由其分销商提供的 Infineon IPD068N10N3GATMA1 的描述。

150W 20V 2.7V 51nC N MOSFET 100V 6.8m¦¸@ 10V 90£¨Tc=25¡ãC£©,72£¨Tc=100¡ãC£© 3.69nF@ 50V TO-252

Unikeyic (ICkey)

Power MOSFET, N Channel, 100 V, 90 A, 0.0057 ohm, TO-252 (DPAK), Surface Mount

EBV Elektronik

Power Field-Effect Transistor, 90A I(D), 100V, 0.0068ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

Semicontronic

Infineon's 100 V OptiMOS™ power MOSFETs offer superior solutions for high efficiency, high power-density SMPS. Compared to the next best technology this family achieves a reduction of 30% in both RDS(on) and FOM (figure of merit).

Infineon

MOSFET, N-CH, 100V, 90A, TO-252-3; Transistor Polarity:N Channel; Continuous Drain Current Id:90A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0057ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.7V;

element14 APAC