价格与库存
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Avnet | IPD082N10N3GATMA1 | 5,000 | 2500 | 2d | ||||||||
| Newark | IPD082N10N3GATMA1 | 253 | 1 | Cut Tape | ||||||||
| Arrow Electronics | IPD082N10N3GATMA1 | 4,475 | 1 | |||||||||
| Future Electronics | IPD082N10N3GATMA1 | 45,000 | 2500 | Tape & Reel | ||||||||
| Rutronik | TMOS2444 | 2,500 | 2500 | 14h |
供应链
Country of OriginMalaysia, South Korea
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2009-02-17
Lifecycle StatusProduction (Last Updated: 2 weeks ago)
相关零件
InfineonIPD068N10N3GATMA1
150W 20V 2.7V 51nC N MOSFET 100V 6.8m¦¸@ 10V 90£¨Tc=25¡ãC£©,72£¨Tc=100¡ãC£© 3.69nF@ 50V TO-252
STMicroelectronicsSTD80N10F7
N-channel 100 V, 0.0085 Ohm typ., 70 A STripFET F7 Power MOSFET in DPAK package
STMicroelectronicsSTD105N10F7AG
Power Field-Effect Transistor, 80A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
描述
由其分销商提供的 Infineon IPD082N10N3GATMA1 的描述。
Trans MOSFET N-CH 100V 80A Automotive 3-Pin(2+Tab) DPAK
100V 80A 8.6m´Î@10V73A 125W 3.5V@75Ã×A N Channel PG-TO252-3 MOSFETs ROHS
100V 80A 8.2mΩ@10V,73A 125W 3.5V@75uA 1 N-Channel TO-252-3 MOSFETs ROHS
125W 20V 3.5V 42nC@ 10V 100V 8.2m¦¸@ 10V 80A 2.99nF@ 50V TO-252 2.41mm
Infineon MOSFET IPD082N10N3GATMA1
Infineon's 100 V OptiMOS™ power MOSFETs offer superior solutions for high efficiency, high power-density SMPS. Compared to the next best technology this family achieves a reduction of 30% in both RDS(on) and FOM (figure of merit).
Mosfet, N-Ch, 100V, 80A, 175Deg C, 125W; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:80A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:2.7V Rohs Compliant: Yes |Infineon Technologies IPD082N10N3GATMA1
制造商别名
Infineon 在全球拥有多个品牌，分销商可将其用作替代名称。Infineon 也可称为以下名称：
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
技术规格
Physical
Case/PackageTO-252-3
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)80 A
Drain to Source Resistance8.2 mΩ
Drain to Source Voltage (Vdss)100 V
Fall Time8 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance2.99 nF
Max Dual Supply Voltage100 V
Max Operating Temperature175 °C
Max Power Dissipation125 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Number of Elements1
On-State Resistance8.2 mΩ
Package Quantity2500
PackagingTape & Reel
Power Dissipation125 W
Rds On Max8.2 mΩ
Rise Time42 ns
Schedule B8541290080
Turn-Off Delay Time31 ns
Turn-On Delay Time18 ns