供应链
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2014-10-30
Lifecycle StatusProduction (Last Updated: 3 months ago)
相关零件
InfineonIPD068N10N3GATMA1
N-Channel Power MOSFET 100V 6.8mΩ@10V 90(Tc=25°C) 72(Tc=100°C) 3.69nF@50V TO-252
onsemiFDD86369-F085
Power Field-Effect Transistor, 1-Element, N-Channel, Metal-oxide Semiconductor FET, TO-252AA
STMicroelectronicsSTD80N10F7
N-channel 100 V, 0.0085 Ohm typ., 70 A STripFET F7 Power MOSFET in DPAK package
描述
由其分销商提供的 STMicroelectronics STD105N10F7AG 的描述。
Power Field-Effect Transistor, 80A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
Automotive-grade N-channel 100 V, 6.8 mOhm typ., 80 A STripFET F7 Power MOSFET in a DPAK package
Mosfet, Aec-Q101, N-Ch, 100V, 80A, 120W; |Stmicroelectronics STD105N10F7AG
制造商别名
STMicroelectronics 在全球拥有多个品牌，分销商可将其用作替代名称。STMicroelectronics 也可称为以下名称：
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
技术规格
Physical
Case/PackageTO-252-3
MountSurface Mount
Number of Terminals2
Technical
Continuous Drain Current (ID)80 A
Drain to Source Resistance8 mΩ
Drain to Source Voltage (Vdss)100 V
Input Capacitance4.369 nF
Max Operating Temperature175 °C
Max Power Dissipation120 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Number of Elements1
PackagingTape and Reel
Power Dissipation120 W
Rds On Max8 mΩ
Schedule B8541290080