Infineon IPD90N10S4L06ATMA1

Name: Infineon IPD90N10S4L06ATMA1
Brand: Infineon
SKU: IPD90N10S4L06ATMA1

Mosfet, N-Ch, 100V, 90A, To-252 Rohs Compliant: Yes |Infineon Technologies IPD90N10S4L06ATMA1

$ 1.022

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Distributor		SKU		Min	Pkg
Avnet	2	34AC1693	1,301	1		2.900	1.880	1.380	1.380	1.380	16h
Newark	2	IPD90N10S4L06ATMA1	1,301	1	Cut Tape	0.939	0.939	0.939	0.939	0.939
Rochester Electronics		IPD90N10S4L06ATMA1	6,073					1.140	0.946	0.844	13h
DigiKey	3	IPD90N10S4L06ATMA1CT-ND	4,680	1	Cut Tape	3.520	2.277	1.568	1.167	1.167
Arrow Electronics		IPD90N10S4L06ATMA1	4,554	1		2.432	1.550	1.204	1.014	0.971

数据表和文档

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IHS

Datasheet9 页14 年前

库存历史记录

3 个月趋势:

-12.64%

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供应链

Country of OriginGermany, Malaysia

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2011-11-30

Lifecycle StatusProduction (Last Updated: 1 month ago)

描述

由其分销商提供的 Infineon IPD90N10S4L06ATMA1 的描述。

Mosfet, N-Ch, 100V, 90A, To-252 Rohs Compliant: Yes |Infineon Technologies IPD90N10S4L06ATMA1

Newark

Power MOSFET, N Channel, 100 V, 90 A, 0.0058 ohm, TO-252 (DPAK), Surface Mount

Avnet

100V, N-Ch, 6.6 mΩ max, Automotive MOSFET, DPAK, OptiMOS™-T2, PG-TO252-3, RoHS

Infineon SCT

Power Field-Effect Transistor, 90A I(D), 100V, 0.0066ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

IHS

MOSFET, AEC-Q101, N-CH, 100V, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:90A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0058ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.

element14 APAC

Summary of Features: N-channel - Enhancement mode; AEC qualified; MSL1 up to 260C peak reflow; 175C operating temperature; Green Product (RoHS compliant); 100% Avalanche tested | Benefits: highest current capability 180A; low switching and conduction power losses for high thermal efficiency; robust packages with superior quality and reliability; optimized total gate charge enables smaller driver output stages | Target Applications: 48V inverter; 48V DC/DC; HID lighting

Infineon