Infineon IPD053N08N3GATMA1

Name: Infineon IPD053N08N3GATMA1
Brand: Infineon
SKU: IPD053N08N3GATMA1

Power MOSFET, N Channel, 80 V, 90 A, 0.0053 ohm, TO-252 (DPAK), Surface Mount

$ 1.13

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价格与库存

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Distributor		SKU		Min	Pkg
Avnet		IPD053N08N3GATMA1	5,000	2500						0.851	6h
Newark		IPD053N08N3GATMA1	15,347	1		2.280	1.650	1.300	1.160	1.160
Future Electronics	2	IPD053N08N3GATMA1	2,500	2500	Tape & Reel					0.925
Arrow Electronics	4	IPD053N08N3GATMA1	4,088	1		2.006	1.521	1.230	1.114	0.985
Rutronik		TMOS2526	5,000	2500						0.663	11h

数据表和文档

下载 Infineon IPD053N08N3GATMA1 的数据表和制造商文档。

IHS

Datasheet9 页12 年前

_legacy Avnet

iiiC

Arrow Electronics

库存历史记录

3 个月趋势:

-2.30%

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供应链

Country of OriginGermany, Malaysia, South Korea

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2008-01-25

Lifecycle StatusProduction (Last Updated: 1 month ago)

LTB Date2016-04-30

LTD Date2016-10-31

描述

由其分销商提供的 Infineon IPD053N08N3GATMA1 的描述。

Power MOSFET, N Channel, 80 V, 90 A, 0.0053 ohm, TO-252 (DPAK), Surface Mount

EBV Elektronik

OptiMOS™ is the market leader in highly efficient solutions for power generation (e.g. solar micro inverter), power supply (e.g. server and telecom) and power consumption (e.g. electric vehicle).

Infineon

Power Field-Effect Transistor, 90A I(D), 80V, 0.0053ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

Semicontronic

MOSFET, N CH, 90A, 80V, PG-TO252-3; Transistor Polarity:N Channel; Continuous Drain Current Id:90A; Drain Source Voltage Vds:80V; On Resistance Rds(on):4.4mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.8V; Power Dissipation Pd:150W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-252; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:90A; Power Dissipation Pd:150W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V

element14 APAC