STMicroelectronics STD110N8F6

Name: STMicroelectronics STD110N8F6
Brand: STMicroelectronics
SKU: STD110N8F6

N-channel 80 V, 0.0056 Ohm typ., 110 A, STripFET F6 Power MOSFET in a DPAK package

$ 0.824

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Distributor		SKU		Min	Pkg
Newark		STD110N8F6	34	1	Cut Tape	2.740	1.870	1.380	1.110	1.110
Arrow Electronics	2	STD110N8F6	2	1		0.635	0.635	0.635	0.635	0.635
Verical		STD110N8F6	2,500	2500						0.629
DigiKey	2	497-16032-1-ND	551	1	Cut Tape	2.610	1.679	1.147	0.846	0.846
TME	2	STD110N8F6	0	2500						0.830	1h

数据表和文档

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STMicroelectronics

Datasheet16 页13 年前

库存历史记录

3 个月趋势:

-17.33%

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供应链

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2014-12-15

Lifecycle StatusProduction (Last Updated: 4 months ago)

描述

由其分销商提供的 STMicroelectronics STD110N8F6 的描述。

N-channel 80 V, 0.0056 Ohm typ., 110 A, STripFET F6 Power MOSFET in a DPAK package

STMicroelectronics

167W(Tc) 20V 4.5V@ 250¦ÌA 150nC@ 10 V 1N 80V 6.5m¦¸@ 40A,10V 80A 9.13nF@40V DPAK 2.63mm

UnikeyIC

Trans MOSFET N-CH 80V 80A 3-Pin(2+Tab) DPAK T/R

Verical

Lv Mosfet Trench |Stmicroelectronics STD110N8F6

Newark

Power Field-Effect Transistor, 80A I(D), 80V, 0.0065ohm, 1-Element, N-Channel, Silicon, Split Gate Trench Mosfet FET, TO-252

IHS

Power MOSFETs, 80V, 110A, DPAK, Tape and Reel

STMicroelectronics SCT

MOSFET, N-CH, 80V, 80A, 175DEG C, 167W; Transistor Polarity: N Channel; Continuous Drain Current Id: 80A; Drain Source Voltage Vds: 80V; On Resistance Rds(on): 0.0056ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4.5V; Power Dissipation Pd: 167W; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: STripFET F6 Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)

Farnell