供应链
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2014-12-15
Lifecycle StatusProduction (Last Updated: 8 months ago)
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描述
由其分销商提供的 STMicroelectronics STD110N8F6 的描述。
N-channel 80 V, 0.0056 Ohm typ., 110 A, STripFET F6 Power MOSFET in a DPAK package
Power Field-Effect Transistor, 80A I(D), 80V, 0.0065ohm, 1-Element, N-Channel, Silicon, Split Gate Trench Mosfet FET, TO-252
167W(Tc) 20V 4.5V@ 250µA 150nC@ 10 V 1individualNChannel 80V 6.5mΩ@ 40A,10V 80A 9.13nF@40V DPAK SMD mount 2.63mm(height)
MOSFET, N-CH, 80V, 80A, 175DEG C, 167W; Transistor Polarity: N Channel; Continuous Drain Current Id: 80A; Drain Source Voltage Vds: 80V; On Resistance Rds(on): 0.0056ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4.5V; Power Dissipation Pd: 167W; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: STripFET F6 Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)
制造商别名
STMicroelectronics 在全球拥有多个品牌，分销商可将其用作替代名称。STMicroelectronics 也可称为以下名称：
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
技术规格
Physical
Case/PackageTO-252-3
MountSurface Mount
Number of Terminals2
Technical
Continuous Drain Current (ID)80 A
Drain to Source Resistance6.5 mΩ
Drain to Source Voltage (Vds)80 V
Input Capacitance9.13 nF
Max Operating Temperature175 °C
Max Power Dissipation167 W
Min Breakdown Voltage80 V
Min Operating Temperature-55 °C
Number of Elements1
PackagingTape and Reel
Rds On Max6.5 mΩ
Schedule B8541290080