价格与库存
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Avnet | FDD86367-F085 | 12,500 | 2500 | 22h | ||||||||
| Newark | FDD86367-F085 | 2,440 | 1 | Cut Tape | ||||||||
| Rochester Electronics | FDD86367-F085 | 203 | 20h | |||||||||
| DigiKey | FDD86367-F085CT-ND | 9,368 | 1 | Cut Tape | ||||||||
| Flip Electronics | FDD86367-F085 | 4,276 | 2d |
备用零件
Price @ 1000
$ 0.996
$ 1.27
Stock
377,416
399,233
Authorized Distributors
6
6
Mount
Surface Mount
Surface Mount
Case/Package
TO-252-3
-
Drain to Source Voltage (Vdss)
80 V
80 V
Continuous Drain Current (ID)
100 A
100 A
Threshold Voltage
-
-
Rds On Max
4.2 mΩ
-
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
227 W
227 W
Input Capacitance
4.84 nF
-
供应链
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2015-05-06
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
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描述
由其分销商提供的 onsemi FDD86367-F085 的描述。
MOSFET N-CH 80V 100A DPAK / N-Channel 80 V 100A (Tc) 227W (Tj) Surface Mount TO-252AA
PowerTrench® MOSFET, N-Channel, 80V, 100A, 4.2 mΩ,
Single N-Channel 80 V 100 A 227 W Surface Mount Mosfet - TO-252-3
Trans MOSFET N-CH 80V 100A Automotive 3-Pin(2+Tab) DPAK T/R
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Power Field-Effect Transistor, 80V, 0.0042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
MOSFET MV7 80/20V1000A N-CH PowerTrench MOSFET
场效应管, MOSFET, AEC-Q101, N沟道, 80V, 100A, 227W;
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Case/PackageTO-252-3
MountSurface Mount
Number of Terminals2
Weight260.37 mg
Technical
Continuous Drain Current (ID)100 A
Drain to Source Breakdown Voltage80 V
Drain to Source Resistance4.2 mΩ
Drain to Source Voltage (Vdss)80 V
Element ConfigurationSingle
Gate to Source Voltage (Vgs)20 V
Input Capacitance4.84 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation227 W
Min Breakdown Voltage80 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation227 W
Rds On Max4.2 mΩ
Schedule B8541290080
Turn-Off Delay Time36 ns
Turn-On Delay Time20 ns
Dimensions
Height2.517 mm