STMicroelectronics STW42N65M5
Production
In StockTechnical Specifications
Physical
Case/PackageTO-247
MountThrough Hole
Number of Pins3
Technical
Continuous Drain Current (ID)33 A
Drain to Source Breakdown Voltage650 V
Drain to Source Resistance70 mΩ
Drain to Source Voltage (Vdss)650 V
Element ConfigurationSingle
Fall Time13 ns
Gate to Source Voltage (Vgs)25 V
Input Capacitance4.65 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation190 W
Manufacturer Package IdentifierSTW42N65M5
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation190 W
Rds On Max79 mΩ
Resistance79 mΩ
Rise Time24 ns
Schedule B8541290080
Threshold Voltage4 V
Turn-Off Delay Time65 ns
Turn-On Delay Time61 ns
Dimensions
Height20.15 mm
Length15.75 mm
Width5.15 mm
Inventory History
3 month trend: +42.74%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Engineering Resources
View Evaluation kits and Reference designs for STMicroelectronics STW42N65M5.
Related Parts
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N-channel 600 V, 0.075 Ohm, 35 A, TO-247 FDmesh(TM) Power MOSFET (with fast diode)
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STMicroelectronicsSTW48N60DM2
N-channel 600 V, 0.065 Ohm typ., 40 A MDmesh DM2 Power MOSFET in a TO-247 long leads package
Descriptions
Descriptions of STMicroelectronics STW42N65M5 provided by its distributors.
N-channel 650 V, 0.070 Ohm typ., 33 A MDmesh M5 Power MOSFET in TO-247 package
Trans MOSFET N-CH Si 650V 33A 3-Pin(3+Tab) TO-247 Tube
N-CHANNEL 650 V, 0.0070 OHM, 33 A MDMESH V POWER MOSFET IN TO-247 Power Field-Effect Transistor, 33A I(D), 650V, 0.079ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
MOSFET, N CH, 650V, 33A, TO 247; Transistor Polarity:N Channel; Continuous Drain Current Id:33A; Drain Source Voltage Vds:650V; On Resistance Rds(on):0.07ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:190W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (18-Jun-2012)
Manufacturer Aliases
STMicroelectronics has several brands around the world that distributors may use as alternate names. STMicroelectronics may also be known as the following names:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
Inventory History
3 month trend: +42.74%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageTO-247
MountThrough Hole
Number of Pins3
Technical
Continuous Drain Current (ID)33 A
Drain to Source Breakdown Voltage650 V
Drain to Source Resistance70 mΩ
Drain to Source Voltage (Vdss)650 V
Element ConfigurationSingle
Fall Time13 ns
Gate to Source Voltage (Vgs)25 V
Input Capacitance4.65 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation190 W
Manufacturer Package IdentifierSTW42N65M5
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation190 W
Rds On Max79 mΩ
Resistance79 mΩ
Rise Time24 ns
Schedule B8541290080
Threshold Voltage4 V
Turn-Off Delay Time65 ns
Turn-On Delay Time61 ns
Dimensions
Height20.15 mm
Length15.75 mm
Width5.15 mm
Compliance
Environmental Classification
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo SVHC
RoHSCompliant