STMicroelectronics STP75NF75FP

N channel 75 V, 0.0095 Ohm typ., 80 A STripFET II Power MOSFET in TO-220FP package
NRND

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Technical Specifications

Physical
Case/PackageTO-220-3
MountThrough Hole
Number of Pins3
Technical
Continuous Drain Current (ID)80 A
Drain to Source Breakdown Voltage75 V
Drain to Source Resistance9.5 mΩ
Drain to Source Voltage (Vdss)75 V
Element ConfigurationSingle
Fall Time30 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance3.7 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation45 W
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation45 W
Rds On Max11 mΩ
Rise Time100 ns
Schedule B8541290080
Threshold Voltage2 V
Turn-Off Delay Time66 ns
Turn-On Delay Time25 ns
Dimensions
Height20 mm

Documents

Download datasheets and manufacturer documentation for STMicroelectronics STP75NF75FP.

Factory Futures
Datasheet16 pages18 years ago
STMicroelectronics
Datasheet16 pages18 years ago
Future Electronics
Datasheet16 pages18 years ago

Supply Chain

Lifecycle StatusNRND (Last Updated: 3 years ago)

Engineering Resources

View Evaluation kits and Reference designs for STMicroelectronics STP75NF75FP.

Related Parts

Descriptions

Descriptions of STMicroelectronics STP75NF75FP provided by its distributors.

N channel 75 V, 0.0095 Ohm typ., 80 A STripFET II Power MOSFET in TO-220FP package
N channel 75 V 11 mOhm Flange Mount StripFET II Power Mosfet - TO-220FP
Trans MOSFET N-CH 75V 80A 3-Pin(3+Tab) TO-220FP Tube
80 A 75 V 0.011 ohm N-CHANNEL Si POWER MOSFET TO-220AB
MOSFET, N-CH, 75V, 80A, TO-220FP; Transistor Polarity: N Channel; Continuous Drain Current Id: 80A; Drain Source Voltage Vds: 75V; On Resistance Rds(on): 0.0095ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Pow

Manufacturer Aliases

STMicroelectronics has several brands around the world that distributors may use as alternate names. STMicroelectronics may also be known as the following names:

  • ST MICRO
  • STM
  • SGS
  • SGS THOMSON
  • INMOS
  • STMICROE
  • STMICROEL
  • STMICR
  • ST MIC
  • ST MICROELECTRONIC
  • SGS THOMPSON
  • SESCOSEM
  • STMICROELECT
  • ST8
  • STMICROELECTRON
  • WAFERSCALE
  • SGS-ATES
  • ST MICROELECTRONICS SEMI
  • ST/SGS
  • ST MICROELECTRO
  • SGST
  • THOMS
  • STMICROELE
  • WAFERSCALE INTEGRATION INC
  • SGS-Thomson Microelectronics
  • ST Microeletronics

Technical Specifications

Physical
Case/PackageTO-220-3
MountThrough Hole
Number of Pins3
Technical
Continuous Drain Current (ID)80 A
Drain to Source Breakdown Voltage75 V
Drain to Source Resistance9.5 mΩ
Drain to Source Voltage (Vdss)75 V
Element ConfigurationSingle
Fall Time30 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance3.7 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation45 W
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation45 W
Rds On Max11 mΩ
Rise Time100 ns
Schedule B8541290080
Threshold Voltage2 V
Turn-Off Delay Time66 ns
Turn-On Delay Time25 ns
Dimensions
Height20 mm

Documents

Download datasheets and manufacturer documentation for STMicroelectronics STP75NF75FP.

Factory Futures
Datasheet16 pages18 years ago
STMicroelectronics
Datasheet16 pages18 years ago
Future Electronics
Datasheet16 pages18 years ago

Compliance

Environmental Classification
Radiation HardeningNo
RoHSCompliant