STMicroelectronics STGP7NC60HD
Production
In StockTechnical Specifications
Physical
Case/PackageTO-220
MountThrough Hole
Number of Pins3
Weight2.299997 g
Technical
Collector Base Breakdown Voltage (VCES)600 V
Collector Emitter Breakdown Voltage600 V
Collector Emitter Saturation Voltage1.7 V
Collector Emitter Voltage (VCEO)600 V
Continuous Collector Current14 A
Continuous Drain Current (ID)14 A
Current Rating14 A
Drain to Source Voltage (Vdss)600 V
Element ConfigurationSingle
Forward Current20 A
Forward Voltage1.3 V
Max Collector Current25 A
Max Operating Temperature150 °C
Max Power Dissipation80 W
Min Operating Temperature-55 °C
Power Dissipation80 W
Reverse Recovery Time37 ns
Rise Time7 ns
Turn-Off Delay Time72 ns
Turn-On Delay Time18.5 ns
Voltage Rating (DC)600 V
Dimensions
Height9.15 mm
Length10.4 mm
Width4.6 mm
Inventory History
3 month trend: +5.06%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Engineering Resources
View Evaluation kits and Reference designs for STMicroelectronics STGP7NC60HD.
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Descriptions
Descriptions of STMicroelectronics STGP7NC60HD provided by its distributors.
Trans IGBT Chip N-CH 600V 25A 80000mW 3-Pin(3+Tab) TO-220AB Tube / IGBT 600V 25A 80W TO220
STMICROELECTRONICS STGP7NC60HD IGBT Single Transistor, 25 A, 2.5 V, 80 W, 600 V, TO-220, 3 Pins
N-channel 14 A, 600 V, very fast IGBT with Ultrafast diode
STGP7NC60HD Series N-Channel 600 V 25 A Very Fast PowerMESH IGBT - TO-220
Insulated Gate Bipolar Transistor, 25A I(C), 600V V(BR)CES, N-Channel, TO-220AB
IGBT, 600V, 7A, TO-220; DC Collector Current: 25A; Collector Emitter Saturation Voltage Vce(on): 2.5V; Power Dissipation Pd: 80W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-220; No. of Pins: 3Pins; Ope
Manufacturer Aliases
STMicroelectronics has several brands around the world that distributors may use as alternate names. STMicroelectronics may also be known as the following names:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
Inventory History
3 month trend: +5.06%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageTO-220
MountThrough Hole
Number of Pins3
Weight2.299997 g
Technical
Collector Base Breakdown Voltage (VCES)600 V
Collector Emitter Breakdown Voltage600 V
Collector Emitter Saturation Voltage1.7 V
Collector Emitter Voltage (VCEO)600 V
Continuous Collector Current14 A
Continuous Drain Current (ID)14 A
Current Rating14 A
Drain to Source Voltage (Vdss)600 V
Element ConfigurationSingle
Forward Current20 A
Forward Voltage1.3 V
Max Collector Current25 A
Max Operating Temperature150 °C
Max Power Dissipation80 W
Min Operating Temperature-55 °C
Power Dissipation80 W
Reverse Recovery Time37 ns
Rise Time7 ns
Turn-Off Delay Time72 ns
Turn-On Delay Time18.5 ns
Voltage Rating (DC)600 V
Dimensions
Height9.15 mm
Length10.4 mm
Width4.6 mm
Compliance
Environmental Classification
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo SVHC
RoHSCompliant