STMicroelectronics STD60NF06T4
Production
In StockTechnical Specifications
Physical
Case/PackageDPAK
MountSurface Mount
Number of Pins3
Technical
Continuous Drain Current (ID)60 A
Drain to Source Breakdown Voltage60 V
Drain to Source Resistance14 mΩ
Drain to Source Voltage (Vdss)60 V
Dual Supply Voltage60 V
Element ConfigurationSingle
Fall Time20 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.81 nF
Max Operating Temperature175 °C
Max Power Dissipation110 W
Min Operating Temperature-55 °C
Nominal Vgs4 V
Number of Elements1
PackagingTape and Reel
Power Dissipation110 W
Rds On Max16 mΩ
Resistance16 mΩ
Rise Time108 ns
Schedule B8541290080
Threshold Voltage4 V
Turn-Off Delay Time43 ns
Turn-On Delay Time16 ns
Dimensions
Height2.4 mm
Length6.6 mm
Width6.2 mm
Inventory History
3 month trend: -24.17%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Engineering Resources
View Evaluation kits and Reference designs for STMicroelectronics STD60NF06T4.
Related Parts
STMicroelectronicsSTD70N6F3
N-Channel 60 V 10.5 mOhm Surface Mount STripFET III Power MOSFET - TO-252-3
onsemiFDD14AN06LA0-F085
N-Channel PowerTrench® MOSFET, 60V, 50A, 14.6mΩ
InfineonAUIRLR2905ZTRL
Automotive Q101 55V Single N-Channel HEXFET Power MOSFET in a D-Pak Package
Descriptions
Descriptions of STMicroelectronics STD60NF06T4 provided by its distributors.
N-CHANNEL 60 V - 0.014 OHM - 60 A DPAK STripFET II MOSFET
MOSFET, N, D-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:60A; Source Voltage Vds:60V; On Resistance Rds(on):0.014ohm;
Power Field-Effect Transistor, 60A I(D), 60V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
MOSFET, N, D-PAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 60A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.014ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 110W; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (17-Dec-2015); Alternate Case Style: D-PAK; Current Id Max: 60A; External Depth: 10.5mm; External Length / Height: 2.55mm; External Width: 6.8mm; No. of Transistors: 1; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +175°C; Pulse Current Idm: 240A; Voltage Vds Typ: 60V; Voltage Vgs Max: 20V; Voltage Vgs Rds on Measurement: 10V
Manufacturer Aliases
STMicroelectronics has several brands around the world that distributors may use as alternate names. STMicroelectronics may also be known as the following names:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
Inventory History
3 month trend: -24.17%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageDPAK
MountSurface Mount
Number of Pins3
Technical
Continuous Drain Current (ID)60 A
Drain to Source Breakdown Voltage60 V
Drain to Source Resistance14 mΩ
Drain to Source Voltage (Vdss)60 V
Dual Supply Voltage60 V
Element ConfigurationSingle
Fall Time20 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.81 nF
Max Operating Temperature175 °C
Max Power Dissipation110 W
Min Operating Temperature-55 °C
Nominal Vgs4 V
Number of Elements1
PackagingTape and Reel
Power Dissipation110 W
Rds On Max16 mΩ
Resistance16 mΩ
Rise Time108 ns
Schedule B8541290080
Threshold Voltage4 V
Turn-Off Delay Time43 ns
Turn-On Delay Time16 ns
Dimensions
Height2.4 mm
Length6.6 mm
Width6.2 mm
Compliance
Environmental Classification
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo SVHC
RoHSCompliant