Vishay SQ2361ES-T1_GE3

Transistor Mosfet P-ch 60V 2.8A 3-PIN SOT-23 T/r
Datasheet

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Technical Specifications

Technical
Continuous Drain Current (ID)-2.8 A
Drain to Source Breakdown Voltage-60 V
Drain to Source Resistance130 mΩ
Drain to Source Voltage (Vdss)-60 V
Gate to Source Voltage (Vgs)20 V
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Min Operating Temperature-55 °C
Number of Channels1
Power Dissipation2 W
Schedule B8541290080
Turn-Off Delay Time22 ns
Turn-On Delay Time8 ns
Dimensions
Height1.12 mm

Documents

Download datasheets and manufacturer documentation for Vishay SQ2361ES-T1_GE3.

Upverter
Datasheet10 pages4 years ago

Inventory History

3 month trend:
+17.38%

Engineering Resources

View Evaluation kits and Reference designs for Vishay SQ2361ES-T1_GE3.

Descriptions

Descriptions of Vishay SQ2361ES-T1_GE3 provided by its distributors.

Transistor MOSFET P-CH 60V 2.8A 3-Pin SOT-23 T/R
Avnet Japan
P-Channel 60 V 0.177 O 12 nC SMT TrenchFET Power Mosfet - SOT-23
MOSFET, AEC-Q101, P-CH, -60V, SOT-23; Transistor Polarity: P Channel; Continuous Drain Current Id: -2.8A; Drain Source Voltage Vds: -60V; On Resistance Rds(on): 0.13ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage Vgs: -
Automotive P-Channel 60 V (D-S) 175 DEGREE CELCIUS MOSFET Power Field-Effect Transistor, 2.8A I(D), 60V, 0.177ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
Mosfet, P-Ch, 60V, 2.8A, 175Deg C, 2W; Channel Type:P Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:2.8A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:2.5V Rohs Compliant: Yes |Vishay SQ2361ES-T1_GE3

Manufacturer Aliases

Vishay has several brands around the world that distributors may use as alternate names. Vishay may also be known as the following names:

  • VIS
  • VISH
  • VISHAY INTERTECHNOLOGY INC
  • VISHA
  • Vishay Thin Film
  • Vishay Intertechnology
  • Vishay Semiconductors
  • VISAHY
  • VISHY
  • VISHAY INTERTECHNOLOGY ASIA PTE LTD
  • VISHAY FOIL RESISTORS
  • Vishay Intertech
  • Vishay Semiconductor Opto Division
  • VISH/IR
  • VSHY
  • VSH
  • VISHAY INTERTECHNOLOGY ASIA PT
  • VSHAY
  • VISHAY ELECTRONIC
  • Vishay General Semiconductor - Diodes Division
  • Vishay Intertechnologies
  • VISHAY AMERICAS INC
  • Vishay Semiconductor Diodes Division
  • VISHAY PRECISION GROUP
  • VISHAY AMERICAS
  • Vishay Intertechnology Inc.

Part Number Aliases

This part may be known by these alternate part numbers:

  • SQ2361ES-T1-GE3
  • SQ2361ES-T1/GE3
  • SQ2361ES-T1GE3
  • SQ2361EST1GE3

Technical Specifications

Technical
Continuous Drain Current (ID)-2.8 A
Drain to Source Breakdown Voltage-60 V
Drain to Source Resistance130 mΩ
Drain to Source Voltage (Vdss)-60 V
Gate to Source Voltage (Vgs)20 V
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Min Operating Temperature-55 °C
Number of Channels1
Power Dissipation2 W
Schedule B8541290080
Turn-Off Delay Time22 ns
Turn-On Delay Time8 ns
Dimensions
Height1.12 mm

Documents

Download datasheets and manufacturer documentation for Vishay SQ2361ES-T1_GE3.

Upverter
Datasheet10 pages4 years ago

Compliance

Environmental Classification
Lead FreeLead Free
RoHSNon-Compliant
Compliance Statements
Rohs Statement5 pages12 years ago