Infineon SPD02N80C3ATMA1
Production
Price and Stock
Authorized Distributors
Non-Authorized Stocking Distributors
Non-Authorized Dealers
| Distributor | SKU | MOQ | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 726-SPD02N80C3ATMA1 | 55,068 | 1 | Tape & Reel | 19h | ||||||||
| SPD02N80C3ATMA1 | 1,380 | 1d | ||||||||||
| SPD02N80C3ATMA1CT-ND | 8,934 | 1 | Cut Tape | 1d | ||||||||
| SPD02N80C3ATMA1 | 1,155 | 1 | Cut Tape | 1d | ||||||||
| SPD02N80C3ATMA1 | 5,000 | 2500 | 23h |
Technical Specifications
Physical
Case/PackageTO-252-3
MountSurface Mount
Number of Pins3
Technical
Continuous Drain Current (ID)2 A
Current Rating2 A
Drain to Source Resistance2.4 Ω
Drain to Source Voltage (Vdss)800 V
Fall Time18 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance290 pF
Max Dual Supply Voltage800 V
Max Operating Temperature150 °C
Max Power Dissipation42 W
Min Operating Temperature-55 °C
On-State Resistance2.7 Ω
Package Quantity2500
PackagingDigi-Reel®
Power Dissipation42 W
Rds On Max2.7 Ω
Rise Time15 ns
Schedule B8541290080
Turn-Off Delay Time65 ns
Turn-On Delay Time25 ns
Voltage Rating (DC)800 V
Inventory History
3 month trend: +5.96%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Engineering Resources
View Evaluation kits and Reference designs for Infineon SPD02N80C3ATMA1.
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Descriptions
Descriptions of Infineon SPD02N80C3ATMA1 provided by its distributors.
Single N-Channel 800 V 2.7 mOhm 16 nC CoolMOS Power Mosfet - PG-TO252-3
Power Field-Effect Transistor, 2A I(D), 800V, 2.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
MOSFET, N, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:2A; Drain Source Voltage Vds:800V; On Resistance Rds(on):2.7ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:42W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-252; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:2A; Package / Case:TO-252; Power Dissipation Pd:42W; Termination Type:SMD; Transistor Type:Power MOSFET; Voltage Vds Typ:800V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 2 / Drain-Source Voltage (Vds) V = 800 / ON Resistance (Rds(on)) Ohm = 2.7 / Gate-Source Voltage V = 20 / Fall Time ns = 18 / Rise Time ns = 15 / Turn-OFF Delay Time ns = 72 / Turn-ON Delay Time ns = 15 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = TO-252 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 260 / Power Dissipation (Pd) W = 42
800V CoolMOS C3 is Infineon's third series of CoolMOS with market entry in 2001. C3 is the "working horse" of the portfolio. | Summary of Features: Low specific on-state resistance; (R on*A); Very low energy storage in output capacitance (E oss) @400V; Low gate charge (Q g); Fieldproven CoolMOS quality; CoolMOS technology has been manufactured by Infineon since 1998 | Benefits: High efficiency and power density; Outstanding cost/performance; High reliability; Ease-of-use | Target Applications: Consumer; PC power; Adapter; Lighting; Solar
Manufacturer Aliases
Infineon has several brands around the world that distributors may use as alternate names. Infineon may also be known as the following names:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEN
- INFINEON TECH
- IR/INFINEON
- IFX
- INFIENON
- IFT
- INFINEON/SIEMENS
- INFINEON/IR
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- LNFINEON
- INFINEON TECHNO
- Infineon Technologies Americas Corp
- INFINEON TECHNOLOGIES (ASIA
Inventory History
3 month trend: +5.96%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageTO-252-3
MountSurface Mount
Number of Pins3
Technical
Continuous Drain Current (ID)2 A
Current Rating2 A
Drain to Source Resistance2.4 Ω
Drain to Source Voltage (Vdss)800 V
Fall Time18 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance290 pF
Max Dual Supply Voltage800 V
Max Operating Temperature150 °C
Max Power Dissipation42 W
Min Operating Temperature-55 °C
On-State Resistance2.7 Ω
Package Quantity2500
PackagingDigi-Reel®
Power Dissipation42 W
Rds On Max2.7 Ω
Rise Time15 ns
Schedule B8541290080
Turn-Off Delay Time65 ns
Turn-On Delay Time25 ns
Voltage Rating (DC)800 V