Vishay SIRA24DP-T1-GE3
In Stock
Price and Stock
Authorized Distributors
Non-Authorized Stocking Distributors
Non-Authorized Dealers
| Distributor | SKU | MOQ | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 78-SIRA24DP-T1-GE3 | 61,592 | 1 | Tape & Reel | 2d | ||||||||
| SIRA24DP-T1-GE3 | 12,000 | 3K | 1d | |||||||||
| SIRA24DP-T1-GE3 | 6,000 | 3K | 1d | |||||||||
| SIRA24DP-T1-GE3 | 6,000 | 6K | 1d | |||||||||
| SIRA24DP-T1-GE3CT-ND | 5,057 | 1 | Cut Tape | 1d |
Technical Specifications
Technical
Continuous Drain Current (ID)44.5 A
Drain to Source Breakdown Voltage25 V
Drain to Source Resistance1.15 mΩ
Drain to Source Voltage (Vdss)25 V
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Manufacturer Package IdentifierS17-0173-Single
Min Operating Temperature-55 °C
Number of Channels1
Power Dissipation5 W
Schedule B8541290080
Turn-Off Delay Time18 ns
Turn-On Delay Time12 ns
Dimensions
Height1.17 mm
Inventory History
3 month trend: +1.91%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Documents
Download datasheets and manufacturer documentation for Vishay SIRA24DP-T1-GE3.
Newark
Future Electronics
Engineering Resources
View Evaluation kits and Reference designs for Vishay SIRA24DP-T1-GE3.
Descriptions
Descriptions of Vishay SIRA24DP-T1-GE3 provided by its distributors.
N-Channel 25 V 1.4 mOhm 62.5 W TrenchFET Gen IV Mosfet - PowerPAK SO-8
Trans MOSFET N-CH 25V 60A 8-Pin PowerPAK SO EP T/R
N-Channel 25-V (D-S) Mosfet |Vishay SIRA24DP-T1-GE3
MOSFET 25V Vds 60A Id 17.2nC Qg Typ.
PowerPAK SO-8 Single MOSFETs ROHS
MOSFET, N-CH, 25V, 60A, POWERPAK SO; Transistor Polarity: N Channel; Continuous Drain Current Id: 60A; Drain Source Voltage Vds: 25V; On Resistance Rds(on): 0.00115ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.1
Manufacturer Aliases
Vishay has several brands around the world that distributors may use as alternate names. Vishay may also be known as the following names:
- VIS
- VISH
- VISHAY INTERTECHNOLOGY INC
- VISHA
- Vishay Thin Film
- Vishay Intertechnology
- Vishay Semiconductors
- VISAHY
- VISHY
- VISHAY INTERTECHNOLOGY ASIA PTE LTD
- VISHAY FOIL RESISTORS
- Vishay Intertech
- Vishay Semiconductor Opto Division
- VISH/IR
- VSHY
- VSH
- VISHAY INTERTECHNOLOGY ASIA PT
- VSHAY
- VISHAY ELECTRONIC
- Vishay General Semiconductor - Diodes Division
- Vishay Intertechnologies
- VISHAY AMERICAS INC
- Vishay Semiconductor Diodes Division
- VISHAY PRECISION GROUP
- VISHAY AMERICAS
- Vishay Intertechnology Inc.
Inventory History
3 month trend: +1.91%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Technical
Continuous Drain Current (ID)44.5 A
Drain to Source Breakdown Voltage25 V
Drain to Source Resistance1.15 mΩ
Drain to Source Voltage (Vdss)25 V
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Manufacturer Package IdentifierS17-0173-Single
Min Operating Temperature-55 °C
Number of Channels1
Power Dissipation5 W
Schedule B8541290080
Turn-Off Delay Time18 ns
Turn-On Delay Time12 ns
Dimensions
Height1.17 mm
Documents
Download datasheets and manufacturer documentation for Vishay SIRA24DP-T1-GE3.
Newark
Future Electronics