Vishay SI7121DN-T1-GE3
In Stock
Price and Stock
Authorized Distributors
Non-Authorized Stocking Distributors
Non-Authorized Dealers
| Distributor | SKU | MOQ | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 781-SI7121DN-T1-GE3 | 6,079 | 1 | Tape & Reel | 1d | ||||||||
| SI7121DN-T1-GE3CT-ND | 13,070 | 1 | Cut Tape | 1d | ||||||||
| SI7121DN-T1-GE3 | 12,000 | 3K | Tape & Reel | 16h | ||||||||
| 70616998 | 0 | 10 | Bulk | 16h | ||||||||
| 3156807 | 0 | 3K | Tape & Reel | 23h |
Technical Specifications
Physical
Contact PlatingTin
MountSurface Mount
Number of Pins8
Technical
Continuous Drain Current (ID)10.6 A
Drain to Source Breakdown Voltage-30 V
Drain to Source Resistance18 mΩ
Drain to Source Voltage (Vdss)30 V
Dual Supply Voltage30 V
Fall Time15 ns
Gate to Source Voltage (Vgs)25 V
Input Capacitance1.96 nF
Max Operating Temperature150 °C
Max Power Dissipation52 W
Min Operating Temperature-55 °C
Nominal Vgs-3 V
Number of Channels1
Number of Elements1
PackagingCut Tape
Power Dissipation3.7 W
Rds On Max18 mΩ
Resistance18 mΩ
Rise Time100 ns
Schedule B8541290080
TerminationSMD/SMT
Threshold Voltage-3 V
Turn-Off Delay Time28 ns
Turn-On Delay Time44 ns
Dimensions
Height1.04 mm
Length3.05 mm
Width3.05 mm
Inventory History
3 month trend: -4.55%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Engineering Resources
View Evaluation kits and Reference designs for Vishay SI7121DN-T1-GE3.
Related Parts
onsemiFDS6675BZ
P-Channel 30 V 21.8 mOhm 2.5 W Power Trench Mosfet - SOIC-8
InfineonIRF7811AVTRPBF
MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 11 Milliohms;ID 10.8A;SO-8;PD 2.5W;VGS +/-20
InfineonIRF7811AVPBF
MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 11 Milliohms;ID 10.8A;SO-8;PD 2.5W;VGS +/-20
Descriptions
Descriptions of Vishay SI7121DN-T1-GE3 provided by its distributors.
P-Channel 30 V 0.018 Ohm 52 W Surface Mount Power Mosfet - PowerPAK-1212-8
P-CHANNEL 30-V (D-S) MOSFET Power Field-Effect Transistor, 10.6A I(D), 30V, 0.018ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
Transistors - FETs, MOSFETs - Single 1 (Unlimited) PowerPAK® 1212-8 Surface Mount MOSFET (Metal Oxide) P-Channel Tape & Reel (TR) 18m Ω @ 10A, 10V 16A Tc -50°C~150°C TJ MOSFET P-CH 30V 16A 1212-8
Transistor Polarity:p Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:16A; On Resistance Rds(On):0.015Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Product Range:- Rohs Compliant: No
MOSFET, P, PPAK1212; Transistor Polarity:P Channel; Continuous Drain Current Id:16A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):18mohm; Rds(on) Test Voltage Vgs:25V; Threshold Voltage Vgs Typ:-3V; Power Dissipation Pd:52W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PowerPAK 1212; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:-16A; Junction Temperature Tj Max:150°C; Package / Case:PowerPAK; Power Dissipation Pd:52W; Power Dissipation Pd:3.7W; Rise Time:13ns; Termination Type:SMD; Voltage Vds Typ:30V; Voltage Vgs Max:-3V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:3V; Voltage Vgs th Min:1V
Manufacturer Aliases
Vishay has several brands around the world that distributors may use as alternate names. Vishay may also be known as the following names:
- VIS
- VISH
- VISHAY INTERTECHNOLOGY INC
- VISHA
- Vishay Thin Film
- Vishay Intertechnology
- Vishay Semiconductors
- VISAHY
- VISHY
- VISHAY INTERTECHNOLOGY ASIA PTE LTD
- VISHAY FOIL RESISTORS
- Vishay Intertech
- Vishay Semiconductor Opto Division
- VISH/IR
- VSHY
- VSH
- VISHAY INTERTECHNOLOGY ASIA PT
- VSHAY
- VISHAY ELECTRONIC
- Vishay General Semiconductor - Diodes Division
- Vishay Intertechnologies
- VISHAY AMERICAS INC
- Vishay Semiconductor Diodes Division
- VISHAY PRECISION GROUP
- VISHAY AMERICAS
- Vishay Intertechnology Inc.
Inventory History
3 month trend: -4.55%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Contact PlatingTin
MountSurface Mount
Number of Pins8
Technical
Continuous Drain Current (ID)10.6 A
Drain to Source Breakdown Voltage-30 V
Drain to Source Resistance18 mΩ
Drain to Source Voltage (Vdss)30 V
Dual Supply Voltage30 V
Fall Time15 ns
Gate to Source Voltage (Vgs)25 V
Input Capacitance1.96 nF
Max Operating Temperature150 °C
Max Power Dissipation52 W
Min Operating Temperature-55 °C
Nominal Vgs-3 V
Number of Channels1
Number of Elements1
PackagingCut Tape
Power Dissipation3.7 W
Rds On Max18 mΩ
Resistance18 mΩ
Rise Time100 ns
Schedule B8541290080
TerminationSMD/SMT
Threshold Voltage-3 V
Turn-Off Delay Time28 ns
Turn-On Delay Time44 ns
Dimensions
Height1.04 mm
Length3.05 mm
Width3.05 mm
Compliance
Environmental Classification
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo SVHC
RoHSCompliant
Compliance Statements