Vishay SI5419DU-T1-GE3
Price and Stock
Authorized Distributors
Non-Authorized Stocking Distributors
Non-Authorized Dealers
| Distributor | SKU | MOQ | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 781-SI5419DU-GE3 | 30,289 | 1 | Tape & Reel | 17h | ||||||||
| SI5419DU-T1-GE3CT-ND | 10,116 | 1 | Cut Tape | 1d | ||||||||
| SI5419DU-T1-GE3 | 2,900 | 1 | Cut Tape | 1d | ||||||||
| SI5419DU-T1-GE3 | 2,900 | 34 | 21h | |||||||||
| 57AJ0446 | 6,656 | 1 | Cut Tape | 1d |
Technical Specifications
Physical
MountSurface Mount
Number of Pins8
Technical
Continuous Drain Current (ID)9.9 A
Drain to Source Breakdown Voltage-30 V
Drain to Source Resistance20 mΩ
Drain to Source Voltage (Vdss)30 V
Element ConfigurationSingle
Fall Time12 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.4 nF
Max Operating Temperature150 °C
Max Power Dissipation31 W
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation3.1 W
Rds On Max20 mΩ
Resistance20 MΩ
Rise Time10 ns
Schedule B8541290080
Turn-Off Delay Time40 ns
Turn-On Delay Time10 ns
Dimensions
Height750 µm
Length3 mm
Width1.9 mm
Inventory History
3 month trend: -5.42%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Engineering Resources
View Evaluation kits and Reference designs for Vishay SI5419DU-T1-GE3.
Related Parts
InfineonIRF7416PBF
MOSFET, Power;P-Ch;VDSS -30V;RDS(ON) 0.02Ohm;ID -10A;SO-8;PD 2.5W;VGS +/-20V;-55
InfineonIRF7811AVPBF
MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 11 Milliohms;ID 10.8A;SO-8;PD 2.5W;VGS +/-20
InfineonIRFHM8363TRPBF
Transistor MOSFET Array Dual N-CH 30V 10A 8-Pin PQFN T/R - Tape and Reel
Descriptions
Descriptions of Vishay SI5419DU-T1-GE3 provided by its distributors.
Si5419DU Series P-Channel 30 V 20 mOhms SMT Power Mosfet - PowerPAK-ChipFET-8
SI5419DU-T1-GE3 P-channel MOSFET Transistor, 9.9 A, 30 V, 8-Pin PowerPAK ChipFET | Siliconix / Vishay SI5419DU-T1-GE3
Trans MOSFET P-CH 30V 9.9A 8-Pin PowerPAK ChipFET T/R
场效应管, MOSFET, P沟道, 30V, 12A, POWERPAK CHIPFET;
P-CHANNEL 30 V (D-S) MOSFET Power Field-Effect Transistor, 12A I(D), 30V, 0.02ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET 30V 12A 31W 20mohm @ 10V
Manufacturer Aliases
Vishay has several brands around the world that distributors may use as alternate names. Vishay may also be known as the following names:
- VIS
- VISH
- VISHAY INTERTECHNOLOGY INC
- VISHA
- Vishay Thin Film
- Vishay Intertechnology
- Vishay Semiconductors
- VISAHY
- VISHY
- VISHAY INTERTECHNOLOGY ASIA PTE LTD
- VISHAY FOIL RESISTORS
- Vishay Intertech
- Vishay Semiconductor Opto Division
- VISH/IR
- VSHY
- VSH
- VISHAY INTERTECHNOLOGY ASIA PT
- VSHAY
- VISHAY ELECTRONIC
- Vishay General Semiconductor - Diodes Division
- Vishay Intertechnologies
- VISHAY AMERICAS INC
- Vishay Semiconductor Diodes Division
- VISHAY PRECISION GROUP
- VISHAY AMERICAS
- Vishay Intertechnology Inc.
Inventory History
3 month trend: -5.42%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
MountSurface Mount
Number of Pins8
Technical
Continuous Drain Current (ID)9.9 A
Drain to Source Breakdown Voltage-30 V
Drain to Source Resistance20 mΩ
Drain to Source Voltage (Vdss)30 V
Element ConfigurationSingle
Fall Time12 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.4 nF
Max Operating Temperature150 °C
Max Power Dissipation31 W
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation3.1 W
Rds On Max20 mΩ
Resistance20 MΩ
Rise Time10 ns
Schedule B8541290080
Turn-Off Delay Time40 ns
Turn-On Delay Time10 ns
Dimensions
Height750 µm
Length3 mm
Width1.9 mm