Vishay SI5411EDU-T1-GE3

Si5411EDU Series 12 V 25 A 8.2 mOhm SMT P-Channel MOSFET - PowerPAK ChipFET
Datasheet

Price and Stock

Technical Specifications

Physical
MountSurface Mount
Technical
Continuous Drain Current (ID)25 A
Drain to Source Breakdown Voltage-12 V
Drain to Source Resistance15.5 mΩ
Drain to Source Voltage (Vdss)12 V
Element ConfigurationSingle
Fall Time35 ns
Gate to Source Voltage (Vgs)8 V
Input Capacitance4.1 nF
Max Operating Temperature150 °C
Max Power Dissipation31 W
Min Operating Temperature-50 °C
Number of Channels1
Rds On Max8.2 mΩ
Rise Time30 ns
Turn-Off Delay Time70 ns
Turn-On Delay Time30 ns

Documents

Download datasheets and manufacturer documentation for Vishay SI5411EDU-T1-GE3.

Future Electronics
Datasheet9 pages9 years ago

Engineering Resources

View Evaluation kits and Reference designs for Vishay SI5411EDU-T1-GE3.

Related Parts

Descriptions

Descriptions of Vishay SI5411EDU-T1-GE3 provided by its distributors.

Si5411EDU Series 12 V 25 A 8.2 mOhm SMT P-Channel MOSFET - PowerPAK ChipFET
Trans MOSFET P-CH 12V 16.5A 8-Pin PowerPAK ChipFET T/R
12V 25A 8.2m´Î@4.5V6A 31W 900mV@250Ã×A P Channel PowerPAK ChipFET MOSFETs ROHS
MOSFET -12V .0082ohm@-4.5V -25A P-Ch T-FET
MOSFET P-CH 12V 25A PPAK CHIPFET
P-Ch PPAK ChipFET BWL (Micro-Clip) 20V 8mohm @ 4.5V

Manufacturer Aliases

Vishay has several brands around the world that distributors may use as alternate names. Vishay may also be known as the following names:

  • VIS
  • VISH
  • VISHAY INTERTECHNOLOGY INC
  • VISHA
  • Vishay Thin Film
  • Vishay Intertechnology
  • Vishay Semiconductors
  • VISAHY
  • VISHY
  • VISHAY INTERTECHNOLOGY ASIA PTE LTD
  • VISHAY FOIL RESISTORS
  • Vishay Intertech
  • Vishay Semiconductor Opto Division
  • VISH/IR
  • VSHY
  • VSH
  • VISHAY INTERTECHNOLOGY ASIA PT
  • VSHAY
  • VISHAY ELECTRONIC
  • Vishay General Semiconductor - Diodes Division
  • Vishay Intertechnologies
  • VISHAY AMERICAS INC
  • Vishay Semiconductor Diodes Division
  • VISHAY PRECISION GROUP
  • VISHAY AMERICAS
  • Vishay Intertechnology Inc.

Technical Specifications

Physical
MountSurface Mount
Technical
Continuous Drain Current (ID)25 A
Drain to Source Breakdown Voltage-12 V
Drain to Source Resistance15.5 mΩ
Drain to Source Voltage (Vdss)12 V
Element ConfigurationSingle
Fall Time35 ns
Gate to Source Voltage (Vgs)8 V
Input Capacitance4.1 nF
Max Operating Temperature150 °C
Max Power Dissipation31 W
Min Operating Temperature-50 °C
Number of Channels1
Rds On Max8.2 mΩ
Rise Time30 ns
Turn-Off Delay Time70 ns
Turn-On Delay Time30 ns

Documents

Download datasheets and manufacturer documentation for Vishay SI5411EDU-T1-GE3.

Future Electronics
Datasheet9 pages9 years ago

Compliance

Environmental Classification
Lead FreeLead Free
RoHSCompliant
Compliance Statements
Rohs Statement5 pages12 years ago