Vishay SI5410DU-T1-GE3

SI5410DU-T1-GE3 N-channel MOSFET Transistor; 12 A; 40 V; 8-Pin PowerPAK ChipFET
Datasheet

Price and Stock

Technical Specifications

Physical
MountSurface Mount
Number of Pins8
Technical
Continuous Drain Current (ID)9.8 A
Drain to Source Breakdown Voltage40 V
Drain to Source Resistance18 mΩ
Drain to Source Voltage (Vdss)40 V
Fall Time12 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.35 nF
Max Operating Temperature150 °C
Max Power Dissipation31 W
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation3.1 W
Rds On Max18 mΩ
Rise Time15 ns
Threshold Voltage3 V
Turn-Off Delay Time25 ns
Turn-On Delay Time25 ns
Dimensions
Height750 µm
Length3 mm
Width1.9 mm

Documents

Download datasheets and manufacturer documentation for Vishay SI5410DU-T1-GE3.

Farnell
Datasheet9 pages11 years ago
Datasheet9 pages9 years ago
Datasheet9 pages10 years ago
element14 APAC
Datasheet9 pages9 years ago
RS (Formerly Allied Electronics)
Datasheet9 pages8 years ago

Engineering Resources

View Evaluation kits and Reference designs for Vishay SI5410DU-T1-GE3.

Related Parts

Descriptions

Descriptions of Vishay SI5410DU-T1-GE3 provided by its distributors.

SI5410DU-T1-GE3 N-channel MOSFET Transistor; 12 A; 40 V; 8-Pin PowerPAK ChipFET
Trans MOSFET N-CH 40V 9.8A 8-Pin PowerPAK ChipFET T/R
MOSFET, N CHANNEL, 40V, 12A, POWERPAK CH
N-CH 40V 12A 18mOhm ChipFET RoHSconf
Transistor; Transistor Type:MOSFET; Continuous Drain Current, Id:12000mA; Drain Source Voltage, Vds:40V; On Resistance, Rds(on):0.021ohm; Rds(on) Test Voltage, Vgs:20V; Threshold Voltage, Vgs Typ:3V; Power Dissipation, Pd:3.1W ;RoHS Compliant: Yes

Manufacturer Aliases

Vishay has several brands around the world that distributors may use as alternate names. Vishay may also be known as the following names:

  • VIS
  • VISH
  • VISHAY INTERTECHNOLOGY INC
  • VISHA
  • Vishay Thin Film
  • Vishay Intertechnology
  • Vishay Semiconductors
  • VISAHY
  • VISHY
  • VISHAY INTERTECHNOLOGY ASIA PTE LTD
  • VISHAY FOIL RESISTORS
  • Vishay Intertech
  • Vishay Semiconductor Opto Division
  • VISH/IR
  • VSHY
  • VSH
  • VISHAY INTERTECHNOLOGY ASIA PT
  • VSHAY
  • VISHAY ELECTRONIC
  • Vishay General Semiconductor - Diodes Division
  • Vishay Intertechnologies
  • VISHAY AMERICAS INC
  • Vishay Semiconductor Diodes Division
  • VISHAY PRECISION GROUP
  • VISHAY AMERICAS
  • Vishay Intertechnology Inc.

Technical Specifications

Physical
MountSurface Mount
Number of Pins8
Technical
Continuous Drain Current (ID)9.8 A
Drain to Source Breakdown Voltage40 V
Drain to Source Resistance18 mΩ
Drain to Source Voltage (Vdss)40 V
Fall Time12 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.35 nF
Max Operating Temperature150 °C
Max Power Dissipation31 W
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation3.1 W
Rds On Max18 mΩ
Rise Time15 ns
Threshold Voltage3 V
Turn-Off Delay Time25 ns
Turn-On Delay Time25 ns
Dimensions
Height750 µm
Length3 mm
Width1.9 mm

Documents

Download datasheets and manufacturer documentation for Vishay SI5410DU-T1-GE3.

Farnell
Datasheet9 pages11 years ago
Datasheet9 pages9 years ago
Datasheet9 pages10 years ago
element14 APAC
Datasheet9 pages9 years ago
RS (Formerly Allied Electronics)
Datasheet9 pages8 years ago

Compliance

Environmental Classification
Radiation HardeningNo
REACH SVHCUnknown
RoHSCompliant
Compliance Statements
Rohs Statement5 pages12 years ago