Vishay SI4214DDY-T1-GE3
Technical Specifications
Physical
Case/PackageSOIC
MountSurface Mount
Number of Pins8
Weight506.605978 mg
Technical
Continuous Drain Current (ID)8.5 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance16 mΩ
Drain to Source Voltage (Vdss)30 V
Element ConfigurationDual
Fall Time12 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance660 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation3.1 W
Min Operating Temperature-55 °C
Number of Channels2
Number of Elements2
Power Dissipation2 W
Rds On Max19.5 mΩ
Resistance19.5 mΩ
Rise Time45 ns
Schedule B8541290080
Threshold Voltage2.5 V
Turn-Off Delay Time15 ns
Turn-On Delay Time7 ns
Dimensions
Height1.5 mm
Length5 mm
Width4 mm
Inventory History
3 month trend: +1.55%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Documents
Download datasheets and manufacturer documentation for Vishay SI4214DDY-T1-GE3.
element14 APAC
Upverter
Future Electronics
RS (Formerly Allied Electronics)
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Engineering Resources
View Evaluation kits and Reference designs for Vishay SI4214DDY-T1-GE3.
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Descriptions
Descriptions of Vishay SI4214DDY-T1-GE3 provided by its distributors.
Dual N-Channel 30 V 0.0195 Ohm 5 W Surface Mount Mosfet - SOIC-8
Transistor MOSFET Array Dual N-CH 30V 8.5A 8-Pin SOIC T/R
Transistor; Transistor Polarity:Dual N Channel; Continuous Drain Current, Id:8.5A; Drain Source Voltage, Vds:30V; On Resistance, Rds(on):0.0195ohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:2.5V ;RoHS Compliant: Yes
MOSFET, DUAL N-CH, 30V, 8.5A, SOIC; Transistor Polarity: Dual N Channel; Continuous Drain Current Id: 8.5A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.016ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.5V; Power Dissipation Pd: 3.1W; Transistor Case Style: SOIC; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: TrenchFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (20-Jun-2016)
Manufacturer Aliases
Vishay has several brands around the world that distributors may use as alternate names. Vishay may also be known as the following names:
- VIS
- VISH
- VISHAY INTERTECHNOLOGY INC
- VISHA
- Vishay Thin Film
- Vishay Intertechnology
- Vishay Semiconductors
- VISAHY
- VISHY
- VISHAY INTERTECHNOLOGY ASIA PTE LTD
- VISHAY FOIL RESISTORS
- Vishay Intertech
- Vishay Semiconductor Opto Division
- VISH/IR
- VSHY
- VSH
- VISHAY INTERTECHNOLOGY ASIA PT
- VSHAY
- VISHAY ELECTRONIC
- Vishay General Semiconductor - Diodes Division
- Vishay Intertechnologies
- VISHAY AMERICAS INC
- Vishay Semiconductor Diodes Division
- VISHAY PRECISION GROUP
- VISHAY AMERICAS
- Vishay Intertechnology Inc.
Inventory History
3 month trend: +1.55%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageSOIC
MountSurface Mount
Number of Pins8
Weight506.605978 mg
Technical
Continuous Drain Current (ID)8.5 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance16 mΩ
Drain to Source Voltage (Vdss)30 V
Element ConfigurationDual
Fall Time12 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance660 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation3.1 W
Min Operating Temperature-55 °C
Number of Channels2
Number of Elements2
Power Dissipation2 W
Rds On Max19.5 mΩ
Resistance19.5 mΩ
Rise Time45 ns
Schedule B8541290080
Threshold Voltage2.5 V
Turn-Off Delay Time15 ns
Turn-On Delay Time7 ns
Dimensions
Height1.5 mm
Length5 mm
Width4 mm
Documents
Download datasheets and manufacturer documentation for Vishay SI4214DDY-T1-GE3.
element14 APAC
Upverter
Future Electronics
RS (Formerly Allied Electronics)
element14
Compliance
Environmental Classification
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCUnknown
RoHSCompliant
Compliance Statements