Vishay SI2371EDS-T1-GE3
Technical Specifications
Physical
Case/PackageSOT-23
MountSurface Mount
Number of Pins3
Technical
Continuous Drain Current (ID)-4.8 A
Drain to Source Breakdown Voltage-30 V
Drain to Source Resistance37 mΩ
Drain to Source Voltage (Vdss)-30 V
Element ConfigurationSingle
Fall Time62 ns
Gate to Source Voltage (Vgs)12 V
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation1.7 W
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
PackagingDigi-Reel®
Power Dissipation1 W
Rds On Max45 mΩ
Resistance45 mΩ
Rise Time65 ns
Schedule B8541290080
Threshold Voltage-1.5 V
Turn-Off Delay Time47 ns
Turn-On Delay Time7 ns
Dimensions
Height1.12 mm
Inventory History
3 month trend: +181%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Engineering Resources
View Evaluation kits and Reference designs for Vishay SI2371EDS-T1-GE3.
Related Parts
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VishaySI2336DS-T1-GE3
Si2336DS Series N-Channel 30 V 42 mOhm 1.25 W Surface Mount Mosfet - TO-236
Descriptions
Descriptions of Vishay SI2371EDS-T1-GE3 provided by its distributors.
Mosfet Transistor, P Channel, -4.8 A, -30 V, 0.037 Ohm, -10 V, -1.5 V |Vishay SI2371EDS-T1-GE3
Micropower, Ultra-Low-Dropout, Low-Noise, 300-mA CMOS egulator 8-VSSOP -40 to 85
Single P-Channel 30 V 0.045 O 35 nC Surface Mount Power Mosfet - SOT-23
MOSFET, P-CH, -30V, -4.8A, SOT-23-3; Transistor Polarity:P Channel; Continuous Drain Current Id:-4.8A; Source Voltage Vds:-30V; On Resistance
Small Signal Field-Effect Transistor, 4.8A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
Manufacturer Aliases
Vishay has several brands around the world that distributors may use as alternate names. Vishay may also be known as the following names:
- VIS
- VISH
- VISHAY INTERTECHNOLOGY INC
- VISHA
- Vishay Thin Film
- Vishay Intertechnology
- Vishay Semiconductors
- VISAHY
- VISHY
- VISHAY INTERTECHNOLOGY ASIA PTE LTD
- VISHAY FOIL RESISTORS
- Vishay Intertech
- Vishay Semiconductor Opto Division
- VISH/IR
- VSHY
- VSH
- VISHAY INTERTECHNOLOGY ASIA PT
- VSHAY
- VISHAY ELECTRONIC
- Vishay General Semiconductor - Diodes Division
- Vishay Intertechnologies
- VISHAY AMERICAS INC
- Vishay Semiconductor Diodes Division
- VISHAY PRECISION GROUP
- VISHAY AMERICAS
- Vishay Intertechnology Inc.
Inventory History
3 month trend: +181%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageSOT-23
MountSurface Mount
Number of Pins3
Technical
Continuous Drain Current (ID)-4.8 A
Drain to Source Breakdown Voltage-30 V
Drain to Source Resistance37 mΩ
Drain to Source Voltage (Vdss)-30 V
Element ConfigurationSingle
Fall Time62 ns
Gate to Source Voltage (Vgs)12 V
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation1.7 W
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
PackagingDigi-Reel®
Power Dissipation1 W
Rds On Max45 mΩ
Resistance45 mΩ
Rise Time65 ns
Schedule B8541290080
Threshold Voltage-1.5 V
Turn-Off Delay Time47 ns
Turn-On Delay Time7 ns
Dimensions
Height1.12 mm
Compliance
Environmental Classification
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo SVHC
RoHSCompliant
Compliance Statements