Vishay SI2302ADS-T1-E3
Price and Stock
Authorized Distributors
Non-Authorized Stocking Distributors
Non-Authorized Dealers
| Distributor | SKU | MOQ | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 320965-SI2302ADS-T1-E3 | 17,572 | 225 | 2d | |||||||||
| 6861644-SI2302ADS-T1-E3 | 14,074 | 1d | ||||||||||
| SI2302ADS-T1-E3 | 2,110 | 19h | ||||||||||
| SI2302ADS-T1-E3 | 10,282 | 1d | ||||||||||
| SI2302ADS-T1-E3 | 15,646 | 10 | 19h |
Technical Specifications
Physical
Case/PackageSOT-23-3
MountSurface Mount
Number of Pins3
Weight1.437803 g
Technical
Continuous Drain Current (ID)2.1 A
Drain to Source Breakdown Voltage20 V
Drain to Source Resistance45 mΩ
Drain to Source Voltage (Vdss)20 V
Dual Supply Voltage20 V
Element ConfigurationSingle
Fall Time55 ns
Gate to Source Voltage (Vgs)8 V
Input Capacitance300 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation700 mW
Min Operating Temperature-55 °C
Nominal Vgs950 mV
Number of Channels1
Number of Elements1
Output Power700 mW
Power Dissipation700 mW
Rds On Max60 mΩ
Rise Time55 ns
TerminationSMD/SMT
Threshold Voltage950 mV
Turn-Off Delay Time16 ns
Turn-On Delay Time7 ns
Dimensions
Height1.02 mm
Length3.04 mm
Width1.4 mm
Inventory History
Inventory history trend unavailable
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Documents
Download datasheets and manufacturer documentation for Vishay SI2302ADS-T1-E3.
Newark
Farnell
iiiC
Arrow Electronics
RS (Formerly Allied Electronics)
Mouser
Jameco
Garrett
Engineering Resources
View Evaluation kits and Reference designs for Vishay SI2302ADS-T1-E3.
Related Parts
VishaySI2302CDS-T1-GE3
SI2302CDS-T1-GE3 Vishay Transistor MOSFET N-CH 20V2.6A 3-Pin SOT-23 T/R RoHS
VishaySI2302CDS-T1-E3
MOSFET, N CH, 20V, 2.6A, SOT-23-3; Transistor Polarity:N Channel; Continuous Dra
Diodes Inc.ZXMN2B01FTA
ZXMN2B01 Series 20 V 0.1 Ohm N-Channel Enhancement Mode MOSFET - SOT-23
Descriptions
Descriptions of Vishay SI2302ADS-T1-E3 provided by its distributors.
MOSFET, Power,N-Ch,VDSS 20V,RDS(ON) 0.045Ohm,ID 2.1A,TO-236 (SOT-23),PD 0.7W
N-CHANNEL 2.5-V (G-S) MOSFET Small Signal Field-Effect Transistor, 2.1A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
MOSFET, N REEL 3K; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:20V; Current, Id Cont:2.1A; Resistance, Rds On:0.06ohm; Voltage, Vgs Rds on Measurement:4.5V; Voltage, Vgs th Typ:0.95V; Case Style:SOT-23; Termination Type:SMD; Current, Id Max:2.1A; Current, Idm Pulse:10A; No. of Pins:3; Power Dissipation:0.7W; Power Output:0.7W; Power, Pd:0.7W; Power, Ptot:0.7W; Quantity, Reel:3000; Resistance, Rds on @ Vgs = 2.5V N Channel:0.115ohm; Resistance, Rds on @ Vgs = 4.5V N Channel:0.06ohm; Resistance, Rds on Max:0.06ohm; SMD Marking:2A; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Voltage, Rds Measurement:4.5V; Voltage, Vds:20V; Voltage, Vds Max:20V; Voltage, Vgs th Max:1.2V; Voltage, Vgs th Min:0.65V; Width, Tape:8mm
Manufacturer Aliases
Vishay has several brands around the world that distributors may use as alternate names. Vishay may also be known as the following names:
- VIS
- VISH
- VISHAY INTERTECHNOLOGY INC
- VISHA
- Vishay Thin Film
- Vishay Intertechnology
- Vishay Semiconductors
- VISAHY
- VISHY
- VISHAY INTERTECHNOLOGY ASIA PTE LTD
- VISHAY FOIL RESISTORS
- Vishay Intertech
- Vishay Semiconductor Opto Division
- VISH/IR
- VSHY
- VSH
- VISHAY INTERTECHNOLOGY ASIA PT
- VSHAY
- VISHAY ELECTRONIC
- Vishay General Semiconductor - Diodes Division
- Vishay Intertechnologies
- VISHAY AMERICAS INC
- Vishay Semiconductor Diodes Division
- VISHAY PRECISION GROUP
- VISHAY AMERICAS
- Vishay Intertechnology Inc.
Inventory History
Inventory history trend unavailable
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageSOT-23-3
MountSurface Mount
Number of Pins3
Weight1.437803 g
Technical
Continuous Drain Current (ID)2.1 A
Drain to Source Breakdown Voltage20 V
Drain to Source Resistance45 mΩ
Drain to Source Voltage (Vdss)20 V
Dual Supply Voltage20 V
Element ConfigurationSingle
Fall Time55 ns
Gate to Source Voltage (Vgs)8 V
Input Capacitance300 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation700 mW
Min Operating Temperature-55 °C
Nominal Vgs950 mV
Number of Channels1
Number of Elements1
Output Power700 mW
Power Dissipation700 mW
Rds On Max60 mΩ
Rise Time55 ns
TerminationSMD/SMT
Threshold Voltage950 mV
Turn-Off Delay Time16 ns
Turn-On Delay Time7 ns
Dimensions
Height1.02 mm
Length3.04 mm
Width1.4 mm
Documents
Download datasheets and manufacturer documentation for Vishay SI2302ADS-T1-E3.
Newark
Farnell
iiiC
Arrow Electronics
RS (Formerly Allied Electronics)
Mouser
Jameco
Garrett
Compliance
Environmental Classification
Lead FreeLead Free
REACH SVHCNo SVHC
RoHSCompliant
Compliance Statements