onsemi QSE113
Production
Technical Specifications
Physical
Case/PackageRadial
Lens ColorBlack, Clear
MountThrough Hole
Number of Pins2
Weight135 mg
Technical
Breakdown Voltage30 V
Collector Emitter Breakdown Voltage30 V
Collector Emitter Voltage (VCEO)30 V
Dark Current100 nA
Fall Time8 µs
Input Current100 µA
Lens StyleDomed
Max Collector Current1.5 mA
Max Input Current100 µA
Max Operating Temperature100 °C
Max Power Dissipation100 mW
Min Operating Temperature-40 °C
Number of Channels1
Number of Elements1
Operating Supply Voltage5 V
OrientationSide View
Output Power100 mW
Output Voltage30 V
PackagingBulk
Peak Wavelength880 nm
PolarityNPN
Power Consumption100 mW
Power Dissipation100 mW
Rise Time8 µs
Schedule B8541407080
Viewing Angle25 °
Voltage Rating (DC)30 V
Wavelength880 nm
Dimensions
Height5.08 mm
Lead Length12.7 mm
Length4.44 mm
Width2.54 mm
Inventory History
Inventory history trend unavailable
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Supply Chain
Lifecycle StatusProduction (Last Updated: 3 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 3 years ago)
Engineering Resources
View Evaluation kits and Reference designs for onsemi QSE113.
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Descriptions
Descriptions of onsemi QSE113 provided by its distributors.
FAIRCHILD SEMICONDUCTOR QSE113 Phototransistor, 880 nm, 25 , 100 mW, 2 Pins, Side Looking
The QSE113/114 is a silicon phototransistor encapsulated in a wide angle, infrared transparent, black plastic sidelooker package.
INFRARED PHOTOTRANSISTOR; Transistor Polarity:NPN; Wavelength Typ:880nm; Power Consumption:100mW; Viewing Angle:25°; Transistor Case Style:Side Looking; No. of Pins:2; SVHC:No SVHC (19-Dec-2011); Current Ic Typ:1.5mA; External Depth:2.54mm; External Length / Height:5.08mm; External Width:4.44mm; Fall Time tf:8µs; Half Angle:25°; Lead Length:12.7mm; Operating Temperature Max:100°C; Operating Temperature Min:-40°C; Operating Temperature Range:-40°C to +100°C; Package / Case:Side Emitting; Peak Spectral Response Wavelength:880nm; Peak Wavelength:880nm; Rise Time:8µs; Storage Temperature Max:100°C; Storage Temperature Min:-40°C; Termination Type:Radial Leaded; Transistor Type:Photo; Voltage Vcc:5V
Manufacturer Aliases
onsemi has several brands around the world that distributors may use as alternate names. onsemi may also be known as the following names:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON SEMICONDUCTOR CORP
- ON Semiconductor Corporation
- ON4
- onsemi / Fairchild
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
Inventory History
Inventory history trend unavailable
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageRadial
Lens ColorBlack, Clear
MountThrough Hole
Number of Pins2
Weight135 mg
Technical
Breakdown Voltage30 V
Collector Emitter Breakdown Voltage30 V
Collector Emitter Voltage (VCEO)30 V
Dark Current100 nA
Fall Time8 µs
Input Current100 µA
Lens StyleDomed
Max Collector Current1.5 mA
Max Input Current100 µA
Max Operating Temperature100 °C
Max Power Dissipation100 mW
Min Operating Temperature-40 °C
Number of Channels1
Number of Elements1
Operating Supply Voltage5 V
OrientationSide View
Output Power100 mW
Output Voltage30 V
PackagingBulk
Peak Wavelength880 nm
PolarityNPN
Power Consumption100 mW
Power Dissipation100 mW
Rise Time8 µs
Schedule B8541407080
Viewing Angle25 °
Voltage Rating (DC)30 V
Wavelength880 nm
Dimensions
Height5.08 mm
Lead Length12.7 mm
Length4.44 mm
Width2.54 mm
Compliance
Environmental Classification
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo SVHC
RoHSCompliant
Compliance Statements