Nexperia PSMN3R3-80ES,127
$ 1.271
Obsolete
Datasheets & Documents
Download datasheets and manufacturer documentation for Nexperia PSMN3R3-80ES,127.
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Supply Chain
Lifecycle StatusObsolete (Last Updated: 1 year ago)
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 1 year ago)
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Descriptions
Descriptions of Nexperia PSMN3R3-80ES,127 provided by its distributors.
Power Field-Effect Transistor, 120A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
N-channel 80 V, 3.3 mΩ standard level MOSFET in I2PAK
Trans MOSFET N-CH 80V 120A 3-Pin(3+Tab) I2PAK Rail
ELEMENT, NCHANNEL, SILICON, MOSF
Manufacturer Aliases
Nexperia has several brands around the world that distributors may use as alternate names. Nexperia may also be known as the following names:
- Nexperia USA Inc
- NEXPER
- Nexperia BV
- NXP/NEXPERIA
- Nexperia USA
- NEXP
- Nexperi
- NEXPERIA / NXP
- Nexperia Inc
- Nexperia/NXP Semiconductors
- NEXPERIA/NXP SEMICONDUCTOR
- Nexperia(Ahn Se)
- Nexperia Semiconductors Taiwan Ltd
- NEXPERIA/N
- NEXPERIA/PHILIPS
- NEX-NXP
Technical Specifications
Physical
Case/PackageTO-262
Contact PlatingTin
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)120 A
Drain to Source Breakdown Voltage80 V
Drain to Source Resistance3.3 mΩ
Drain to Source Voltage (Vdss)80 V
Element ConfigurationSingle
Fall Time44 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance9.961 nF
Max Dual Supply Voltage80 V
Max Operating Temperature175 °C
Max Power Dissipation338 W
Min Breakdown Voltage80 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation338 W
Rds On Max3.3 mΩ
Rise Time43 ns
Turn-Off Delay Time109 ns
Turn-On Delay Time41 ns
Datasheets & Documents
Download datasheets and manufacturer documentation for Nexperia PSMN3R3-80ES,127.
Compliance
Environmental Classification
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Compliance Statements