NXP Semiconductors PDTA114YT

Bipolar (Bjt) Single Transistor, Brt, Pnp, 50 V, 180 Mhz, 250 Mw, 100 Ma, 100 Rohs Compliant: Yes
Datasheet

Price and Stock

Authorized Distributors
Non-Authorized Stocking Distributors
Non-Authorized Dealers
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DistributorSKUMOQPkg
Win Source
653908-PDTA114YT26,0001140
2d
CXDA Electronics
PDTA114YT33,00510
2d
SHENGYU ELECTRONICS
PDTA114YT16,3471
4d
ZTZ Technology Limited
PDTA114YT3,650
23h
Lixinc
PDTA114YT1,120
3d

Technical Specifications

Physical
Case/PackageSOT-23
MountSurface Mount
Number of Pins3
Technical
Collector Emitter Breakdown Voltage50 V
Collector Emitter Saturation Voltage100 mV
Collector Emitter Voltage (VCEO)50 V
Element ConfigurationSingle
Emitter Base Voltage (VEBO)-10 V
hFE Min30
Max Collector Current100 mA
Max Operating Temperature150 °C
Max Power Dissipation250 mW
Min Operating Temperature-65 °C
PackagingCut Tape
PolarityPNP
Power Dissipation250 mW
Transition Frequency180 MHz
Dimensions
Height1 mm
Length3 mm
Width1.4 mm
Inventory History
Inventory history trend unavailable
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available

Documents

Download datasheets and manufacturer documentation for NXP Semiconductors PDTA114YT.

Newark
Datasheet0 pages0 years ago

Engineering Resources

View Evaluation kits and Reference designs for NXP Semiconductors PDTA114YT.

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Descriptions

Descriptions of NXP Semiconductors PDTA114YT provided by its distributors.

Bipolar (Bjt) Single Transistor, Brt, Pnp, 50 V, 180 Mhz, 250 Mw, 100 Ma, 100 Rohs Compliant: Yes
100 mA 50 V PNP Si SMALL SIGNAL TRANSISTOR TO-236AB
PNP RESISTOR-EQUIPPED TRANSISTOR; R1=10 KILO OHM, R2=47 KILO OHM Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-236AB

Images

Farnell
Augswan
element14 APAC
Farnell

Manufacturer Aliases

NXP Semiconductors has several brands around the world that distributors may use as alternate names. NXP Semiconductors may also be known as the following names:

  • NXP
  • PHILIPS
  • PHIL
  • PHI
  • PHILLIPS
  • NXP USA Inc
  • NXP SEMI
  • NXP SEMICONDUCTOR
  • PHILIPS/NXP
  • PHILIPS SEMICONDUCTORS
  • PHILIP
  • Philips Semiconductor
  • NXP/PHILIPS
  • PHILPS
  • PHILIPS COMPONENTS
  • PHILIPS SEMI
  • PHL
  • PHLIPS
  • NXP Semicon
  • PHILIPS ECG
  • NXP / Freescale
  • PHILL
  • Philips Semiconducto
  • PHILLIP
  • PHILI
  • Philips Semiconductors
  • NXP Semiconductors NV
  • NXP
Inventory History
Inventory history trend unavailable
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available

Technical Specifications

Physical
Case/PackageSOT-23
MountSurface Mount
Number of Pins3
Technical
Collector Emitter Breakdown Voltage50 V
Collector Emitter Saturation Voltage100 mV
Collector Emitter Voltage (VCEO)50 V
Element ConfigurationSingle
Emitter Base Voltage (VEBO)-10 V
hFE Min30
Max Collector Current100 mA
Max Operating Temperature150 °C
Max Power Dissipation250 mW
Min Operating Temperature-65 °C
PackagingCut Tape
PolarityPNP
Power Dissipation250 mW
Transition Frequency180 MHz
Dimensions
Height1 mm
Length3 mm
Width1.4 mm

Documents

Download datasheets and manufacturer documentation for NXP Semiconductors PDTA114YT.

Newark
Datasheet0 pages0 years ago

Compliance

Environmental Classification
REACH SVHCNo SVHC
RoHSCompliant
Compliance Statements
Rohs Statement1 page11 years ago
Reach Statement3 pages11 years ago