Nexperia PBHV8115X,115

Bipolar (Bjt) Single Transistor, Npn, 150 V, 30 Mhz, 1.5 W, 1 A, 10 Rohs Compliant: Yes
Production

Price and Stock

Authorized Distributors
Non-Authorized Stocking Distributors
Non-Authorized Dealers

Technical Specifications

Physical
Case/PackageSOT-89-3
MountSurface Mount
Number of Pins3
Technical
Ambient Temperature Range High150 °C
Collector Base Voltage (VCBO)400 V
Collector Emitter Breakdown Voltage150 V
Collector Emitter Saturation Voltage33 mV
Collector Emitter Voltage (VCEO)150 V
Emitter Base Voltage (VEBO)6 V
Frequency30 MHz
Gain Bandwidth Product30 MHz
hFE Min10
Max Breakdown Voltage150 V
Max Collector Current1 A
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation1.5 W
Min Operating Temperature-55 °C
Number of Elements1
PackagingTape & Reel
PolarityNPN
Power Dissipation520 mW
Schedule B8541290080
Transition Frequency30 MHz
Dimensions
Height1.6 mm

Documents

Download datasheets and manufacturer documentation for Nexperia PBHV8115X,115.

Future Electronics
Datasheet15 pages10 years ago
NXP Semiconductors
Datasheet14 pages10 years ago
Upverter
Technical Drawing5 pages7 years ago

Inventory History

3 month trend:
+22.79%

Supply Chain

Lifecycle StatusProduction (Last Updated: 20 hours ago)
Manufacturer Lifecycle StatusRELEASED FOR SUPPLY (Last Updated: 20 hours ago)

Engineering Resources

View Evaluation kits and Reference designs for Nexperia PBHV8115X,115.

Related Parts

Descriptions

Descriptions of Nexperia PBHV8115X,115 provided by its distributors.

Bipolar (Bjt) Single Transistor, Npn, 150 V, 30 Mhz, 1.5 W, 1 A, 10 Rohs Compliant: Yes
Trans GP BJT NPN 150V 1A 1500mW Automotive 4-Pin(3+Tab) SOT-89 T/R
PBHV8115X - 150 V, 1 A NPN high-voltage low VCEsat transistor
PBHV9115X PNP Transistor, 1 A, 150 V, 3-Pin SOT-89
150V 520mW 1A 50@500mA,10V 30MHz 400mV@100mA,10mA NPN +150¡æ@(Tj) SOT-89 Bipolar Transistors - BJT ROHS
TRANSISTOR, BIPOL, NPN, 150V, SOT-89-3; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 150V; Transition Frequency ft: 30MHz; Power Dissipation Pd: 1.5W; DC Collector Current: 1A; DC Current Gain hFE: 10hFE; Transistor Case Style: SOT-89; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

Manufacturer Aliases

Nexperia has several brands around the world that distributors may use as alternate names. Nexperia may also be known as the following names:

  • Nexperia USA Inc
  • NEXPER
  • Nexperia BV
  • NEXP
  • NXP/NEXPERIA
  • Nexperia USA
  • NEXPERIA / NXP
  • Nexperia Inc
  • Nexperia/NXP Semiconductors
  • Nexperi
  • NEXPERIA/NXP SEMICONDUCTOR
  • Nexperia Semiconductors Taiwan Ltd
  • NEXPERIA/PHILIPS
  • NEX-NXP

Part Number Aliases

This part may be known by these alternate part numbers:

  • 934061421115

Technical Specifications

Physical
Case/PackageSOT-89-3
MountSurface Mount
Number of Pins3
Technical
Ambient Temperature Range High150 °C
Collector Base Voltage (VCBO)400 V
Collector Emitter Breakdown Voltage150 V
Collector Emitter Saturation Voltage33 mV
Collector Emitter Voltage (VCEO)150 V
Emitter Base Voltage (VEBO)6 V
Frequency30 MHz
Gain Bandwidth Product30 MHz
hFE Min10
Max Breakdown Voltage150 V
Max Collector Current1 A
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation1.5 W
Min Operating Temperature-55 °C
Number of Elements1
PackagingTape & Reel
PolarityNPN
Power Dissipation520 mW
Schedule B8541290080
Transition Frequency30 MHz
Dimensions
Height1.6 mm

Documents

Download datasheets and manufacturer documentation for Nexperia PBHV8115X,115.

Future Electronics
Datasheet15 pages10 years ago
NXP Semiconductors
Datasheet14 pages10 years ago
Upverter
Technical Drawing5 pages7 years ago

Compliance

Environmental Classification
Radiation HardeningNo
RoHSCompliant
Compliance Statements
Rohs Statement1 page11 years ago
Reach Statement3 pages11 years ago