Yageo Group XP65SL190DI

Name: Yageo Group XP65SL190DI
Brand: Yageo Group
SKU: XP65SL190DI

Power MOSFET, N Channel, 650 V, 20 A, 0.19 ohm, TO-220CFM, Through Hole

$ 1.277

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Distributor	SKU		Min	Pkg
Newark	XP65SL190DI	120	1		3.160	2.760	2.030	1.690	1.690
Arrow Electronics	XP65SL190DI	3,000	1		1.256	1.256	1.184	1.094	1.094
DigiKey	5048-XP65SL190DI-ND	847	1	Tube	3.370	3.370	1.530	1.325	1.325
Avnet	XP65SL190DI	0	3K						1.191	23h
TTI Europe	XP65SL190DI	0	3K	Tube					1.391*	1d

Inventory History

3 month trend: -2.20%

CAD Models

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Alternate Parts

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Datasheets & Documents

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Farnell

Datasheet8 pages0 years ago

Inventory History

3 month trend:

-2.20%

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Country of OriginMainland China, Taiwan

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2024-03-07

Lifecycle StatusProduction (Last Updated: 2 months ago)

Descriptions

Descriptions of Yageo Group XP65SL190DI provided by its distributors.

Power MOSFET, N Channel, 650 V, 20 A, 0.19 ohm, TO-220CFM, Through Hole

Avnet

Power Field-Effect Transistor, 20A I(D), 650V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

IHS

MOSFET, N-CH, 650V, 20A, TO-220CFM;

Farnell

MOSFET, N-CH, 650V, 20A, TO-220CFM; Channel Type:N Channel; Drain Source Voltage Vds:650V; Continuous Drain Current Id:20A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:5V RoHS Compliant: Yes

Newark