Yageo Group XP4N2R5MT

Name: Yageo Group XP4N2R5MT
Brand: Yageo Group
SKU: XP4N2R5MT

Power Field-Effect Transistor, 100A I(D), 40V, 0.00255ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

$ 0.376

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Distributor		SKU		Min	Pkg
Newark		XP4N2R5MT	178	1	Cut Tape	1.780	1.550	1.090	0.825	0.825
DigiKey		5048-XP4N2R5MTCT-ND	1,000	1	Cut Tape	1.300	0.813	0.535	0.378	0.378
Arrow Electronics		XP4N2R5MT	3,000	3			0.375	0.298	0.286	0.268
Avnet		XP4N2R5MT	0	3K						0.290	1d
Farnell	2	XP4N2R5MT	178	1	Cut Tape	1.242*	0.780*	0.514*	0.514*	0.514*	9h

Inventory History

3 month trend: +0.00%

CAD Models

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Datasheets & Documents

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Farnell

Datasheet8 pages0 years ago

Inventory History

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Country of OriginMainland China, Taiwan

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2024-03-04

Lifecycle StatusProduction (Last Updated: 2 months ago)

Descriptions

Descriptions of Yageo Group XP4N2R5MT provided by its distributors.

Power Field-Effect Transistor, 100A I(D), 40V, 0.00255ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

IHS

MOSFET, N-CH, 40V, 125A, PMPAK;

Farnell

FET N-CH 40V 33.8A 125A PMPAK

DigiKey

N-CH SINGLE 40V PMPAK5X6

TTI Europe

MOSFET, N-CH, 40V, 125A, PMPAK; Channel Type:N Channel; Drain Source Voltage Vds:40V; Continuous Drain Current Id:125A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes

Newark