Yageo Group XP3N5R0AMT

Name: Yageo Group XP3N5R0AMT
Brand: Yageo Group
SKU: XP3N5R0AMT

Power Field-Effect Transistor

$ 0.217

Production

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Price and Stock

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Distributor		SKU		Min	Pkg
Newark		XP3N5R0AMT	600	5	Cut Tape		0.485	0.335	0.232	0.232
Arrow Electronics		XP3N5R0AMT	3,000	3			0.197	0.159	0.152	0.138
DigiKey		5048-XP3N5R0AMTCT-ND	1,000	1	Cut Tape	0.790	0.491	0.316	0.216	0.216
Avnet		XP3N5R0AMT	0	3K						0.146	12h
Farnell	2	XP3N5R0AMT	200	5	Cut Tape		0.395*	0.259*	0.259*	0.259*	9h

Inventory History

3 month trend: +0.00%

CAD Models

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Alternate Parts

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Datasheets & Documents

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Farnell

Datasheet8 pages0 years ago

Inventory History

3 month trend:

+0.00%

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Country of OriginMainland China, Taiwan

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2024-03-04

Lifecycle StatusProduction (Last Updated: 3 months ago)

Descriptions

Descriptions of Yageo Group XP3N5R0AMT provided by its distributors.

Power Field-Effect Transistor

IHS

MOSFET, N-CH, 30V, 63.5A, PMPAK;

Farnell

N-CH SINGLE 30V PMPAK5X6

TTI Europe

MOSFET, N-CH, 30V, 63.5A, PMPAK; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:63.5A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2.3V RoHS Compliant: Yes

Newark