Yageo Group XP10NA8R4IT

Name: Yageo Group XP10NA8R4IT
Brand: Yageo Group
SKU: XP10NA8R4IT

Power Field-Effect Transistor, 44A I(D), 100V, 0.0084ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor...

$ 0.489

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Distributor	SKU		Min	Pkg
Newark	XP10NA8R4IT	160	1		1.800	1.540	1.260	1.070	0.861
Arrow Electronics	XP10NA8R4IT	3,000	1		0.486	0.486	0.446	0.393	0.393
DigiKey	5048-XP10NA8R4IT-ND	980	1	Tube	1.600	1.600	0.676	0.532	0.532
Avnet	XP10NA8R4IT	0	3K						0.427	1d
TTI Europe	XP10NA8R4IT	0	3K	Tube					0.497*	1d

Inventory History

3 month trend: -0.03%

CAD Models

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Alternate Parts

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Datasheets & Documents

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Farnell

Datasheet8 pages0 years ago

Inventory History

3 month trend:

-0.03%

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Country of OriginMainland China, Taiwan

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date2024-03-07

Lifecycle StatusProduction (Last Updated: 3 months ago)

Descriptions

Descriptions of Yageo Group XP10NA8R4IT provided by its distributors.

Power Field-Effect Transistor, 44A I(D), 100V, 0.0084ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

IHS

MOSFET, N-CH, 100V, 44A, TO-220;

Farnell

MOSFET, N-CH, 100V, 44A, TO-220CFM; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:44A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes

Newark