Vishay VS-GT250SA60S

Name: Vishay VS-GT250SA60S
Brand: Vishay
SKU: VS-GT250SA60S

Insulated Gate Bipolar Transistor, 359A I(C), 600V V(BR)CES, N-Channel

$ 27.778

Production

Manufacturer Page Datasheet

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Distributor	SKU		Min	Pkg
DigiKey	112-VS-GT250SA60S-ND	147	1	Tube	43.320	32.387	32.387	28.125	28.125
Newark	VS-GT250SA60S	0	1		32.630	31.050	22.030	22.030	22.030
Avnet	VS-GT250SA60S	0	160					27.778	26.471	2d
TTI Asia	VS-GT250SA60S	Contact						24.220	24.220	1h
TTI Europe	VS-GT250SA60S	0	160	Bulk				33.610*	33.610*	42m

Inventory History

3 month trend: +246%

CAD Models

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Alternate Parts

0 parts available

Datasheets & Documents

Download datasheets and manufacturer documentation for Vishay VS-GT250SA60S.

IHS

Datasheet9 pages4 years ago

Future Electronics

Inventory History

3 month trend:

+246%

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Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2021-08-23

Lifecycle StatusProduction (Last Updated: 4 months ago)

Descriptions

Descriptions of Vishay VS-GT250SA60S provided by its distributors.

Insulated Gate Bipolar Transistor, 359A I(C), 600V V(BR)CES, N-Channel

IHS

Insulated Gate Bipolar Transistor, Ultralow VCE(on), 250 A

Future Electronics

晶体管, IGBT 模块, 600V, 359A, 750W, SOT-227;

element14 APAC

IGBT MOD 600V 380A 893W SOT227

Easev

IGBT, SINGLE, 600V, 359A, SOT-227; Continuous Collector Current:359A; Collector Emitter Saturation Voltage:-; Power Dissipation:750W; Operating Temperature Max:175°C; IGBT Termination:Stud; Collector Emitter Voltage Max:600V RoHS Compliant: Yes

Newark