Vishay SISS5710DN-T1-GE3
$ 0.844
Production
Inventory History
3 month trend: -15.64%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Datasheets & Documents
Download datasheets and manufacturer documentation for Vishay SISS5710DN-T1-GE3.
Descriptions
Descriptions of Vishay SISS5710DN-T1-GE3 provided by its distributors.
Mosfet, N-Ch/150V/26.2A/Powerpak 1212-8S Rohs Compliant: Yes |Vishay SISS5710DN-T1-GE3
N-CHANNEL 150-V (D-S) MOSFET
Power Field-Effect Transistor, 26.2A I(D), 150V, 0.037ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
TrenchFET® Gen V power MOSFET
RS APAC
N-CH SINGLE 150V PPAK1212-8S
Manufacturer Aliases
Vishay has several brands around the world that distributors may use as alternate names. Vishay may also be known as the following names:
- VIS
- VISH
- VISHAY INTERTECHNOLOGY INC
- Vishay Thin Film
- Vishay Intertechnology
- VISHA
- Vishay Semiconductors
- VISAHY
- Vishay Intertech
- VISHY
- VISHAY INTERTECHNOLOGY ASIA PTE LTD
- Vishay Intertechnologies
- Vishay General Semiconductor - Diodes Division
- Vishay Semiconductor Opto Division
- VSHAY
- VISH/IR
- VSHY
- VSH
- VISHAY INTERTECHNOLOGY ASIA PT
- VISHAY ELECTRONIC
- VISHAY AMERICAS INC
- Vishay Semiconductor Diodes Division
- VISHAY OPTO
- VISHAY FOIL RESISTORS
- Vishay Polytech
- Vishay Semiconductor
- Vishay Sfernice
- Vishay Siliconix
- Vishay Dale
- Vishay BCcomponents
- Vishay Angstrohm
- Vishay Draloric
Inventory History
3 month trend: -15.64%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Number of Terminals8
Technical
Continuous Drain Current (ID)26.2 A
Drain to Source Resistance37 mΩ
Max Operating Temperature150 °C
Max Power Dissipation54.3 W
Min Breakdown Voltage150 V
Min Operating Temperature-55 °C
Number of Elements1
Datasheets & Documents
Download datasheets and manufacturer documentation for Vishay SISS5710DN-T1-GE3.