Vishay SISS32ADN-T1-GE3
$ 0.777
Production
Inventory History
3 month trend: -15.71%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Datasheets & Documents
Download datasheets and manufacturer documentation for Vishay SISS32ADN-T1-GE3.
CAD Models
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Descriptions
Descriptions of Vishay SISS32ADN-T1-GE3 provided by its distributors.
Mosfet, N-Ch, 80V, 63A, Powerpak 1212-8S Rohs Compliant: Yes |Vishay SISS32ADN-T1-GE3
Power Field-Effect Transistor, 63A I(D), 80V, 0.0087ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Vishay NMOS, Vds=80 V, 63 A, powerpak 1212-1e 8S, , 8
MOSFET N-CH 80V 17.4A/63A PPAK
Manufacturer Aliases
Vishay has several brands around the world that distributors may use as alternate names. Vishay may also be known as the following names:
- VIS
- VISH
- VISHAY INTERTECHNOLOGY INC
- Vishay Thin Film
- Vishay Intertechnology
- VISHA
- Vishay Semiconductors
- VISAHY
- Vishay Intertech
- VISHY
- VISHAY INTERTECHNOLOGY ASIA PTE LTD
- Vishay Intertechnologies
- Vishay General Semiconductor - Diodes Division
- Vishay Semiconductor Opto Division
- VSHAY
- VISH/IR
- VSHY
- VSH
- VISHAY INTERTECHNOLOGY ASIA PT
- VISHAY ELECTRONIC
- VISHAY AMERICAS INC
- Vishay Semiconductor Diodes Division
- VISHAY OPTO
- VISHAY FOIL RESISTORS
- Vishay Polytech
- Vishay Semiconductor
- Vishay Sfernice
- Vishay Siliconix
- Vishay Dale
- Vishay BCcomponents
- Vishay Angstrohm
- Vishay Draloric
Inventory History
3 month trend: -15.71%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Number of Terminals8
Technical
Continuous Drain Current (ID)63 A
Drain to Source Resistance8.7 mΩ
Max Operating Temperature150 °C
Max Power Dissipation65.7 W
Min Breakdown Voltage80 V
Min Operating Temperature-55 °C
Number of Elements1
Schedule B8541290080
Datasheets & Documents
Download datasheets and manufacturer documentation for Vishay SISS32ADN-T1-GE3.