Vishay SISB46DN-T1-GE3
$ 0.486
NRND
Datasheets & Documents
Download datasheets and manufacturer documentation for Vishay SISB46DN-T1-GE3.
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Supply Chain
Country of OriginGermany
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2016-09-25
Lifecycle StatusNRND (Last Updated: 4 months ago)
Descriptions
Descriptions of Vishay SISB46DN-T1-GE3 provided by its distributors.
Dual N-Channel 40 V 11.71 mOhm 23 W TrenchFET Gen IV Mosfet-PowerPAK 1212-8 Dual
Mosfet, N-Ch, 40V, 34A, 150Deg C, 23W Rohs Compliant: Yes |Vishay SISB46DN-T1-GE3
MOSFET Devices; VISHAY; SISB46DN-T1-GE3; 40 V; 11.4 A; 20 V; 2.6 W
Trans MOSFET N-CH 40V 11.4A 8-Pin PowerPAK 1212 EP T/R
DUAL N-CHANNEL 40-V (D-S) MOSFET
MOSFET Dual N-Channel 40V 34A 8-Pin PowerPAK T/R
Avnet Japan
2.6W 20V 2.2V@ 250¦ÌA 11nC@ 4.5V 2N 40V 11.71m¦¸@ 5A,10V 34A 1.1nF@20V 1212 3.05mm*3.05mm*1.07mm
Power Field-Effect Transistor, 34A I(D), 40V, 0.0158ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
场效应管, MOSFET, N沟道, 40V, 34A, 150度 C, 23W;
MOSFET 2N-CH 40V POWERPAK 1212-8
IC FLASH 4MBIT PARALLEL 32TSOP
Manufacturer Aliases
Vishay has several brands around the world that distributors may use as alternate names. Vishay may also be known as the following names:
- VIS
- VISH
- VISHAY INTERTECHNOLOGY INC
- Vishay Thin Film
- Vishay Intertechnology
- VISHA
- Vishay Semiconductors
- VISAHY
- Vishay Intertech
- VISHY
- VISHAY INTERTECHNOLOGY ASIA PTE LTD
- Vishay Intertechnologies
- Vishay General Semiconductor - Diodes Division
- Vishay Semiconductor Opto Division
- VSHAY
- VISH/IR
- VSHY
- VSH
- VISHAY INTERTECHNOLOGY ASIA PT
- VISHAY ELECTRONIC
- VISHAY AMERICAS INC
- Vishay Semiconductor Diodes Division
- VISHAY OPTO
- Vishay Techno
- VISHAY FOIL RESISTORS
- Vishay Semiconductor
- Vishay Sfernice
- Vishay Siliconix
- Vishay Dale
- Vishay BCcomponents
- Vishay Angstrohm
- Vishay Draloric
Technical Specifications
Physical
Number of Terminals8
Technical
Continuous Drain Current (ID)34 A
Drain to Source Breakdown Voltage40 V
Drain to Source Resistance15.8 mΩ
Drain to Source Voltage (Vdss)40 V
Gate to Source Voltage (Vgs)20 V
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation23 W
Min Breakdown Voltage40 V
Min Operating Temperature-55 °C
Number of Channels2
Number of Elements2
Power Dissipation2.6 W
Schedule B8541290080
Turn-Off Delay Time13 ns
Turn-On Delay Time7 ns
Dimensions
Height1.12 mm
Datasheets & Documents
Download datasheets and manufacturer documentation for Vishay SISB46DN-T1-GE3.