Vishay SIS406DN-T1-GE3
$ 0.393
Production
Inventory History
3 month trend: +4.08%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
CAD Models
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Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2008-09-28
Lifecycle StatusProduction (Last Updated: 4 months ago)
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1.45W(Ta) 25V 3V@ 250¦ÌA 20.5nC@ 10 V 1P 30V 11m¦¸@ 12A,20V 9.9A 2.246nF@15V SOIC-8 1.75mm
Descriptions
Descriptions of Vishay SIS406DN-T1-GE3 provided by its distributors.
Trans MOSFET N-CH 30V 9A 8-Pin PowerPAK 1212 EP T/R
Power Field-Effect Transistor, 9A I(D), 30V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
1.5W(Ta) 25V 3V@ 250¦ÌA 28nC@ 10 V 1N 30V 11m¦¸@ 12A,10V 9A 1.1nF@15V PPAK-1212-8 3.05mm*3.05mm*1.07mm
MOSFET 30V 14A 3.7W 11mohm @ 10V
FET Input Operational Amplifier
Manufacturer Aliases
Vishay has several brands around the world that distributors may use as alternate names. Vishay may also be known as the following names:
- VIS
- VISH
- VISHAY INTERTECHNOLOGY INC
- Vishay Thin Film
- Vishay Intertechnology
- VISHA
- Vishay Semiconductors
- VISAHY
- Vishay Intertech
- VISHY
- VISHAY INTERTECHNOLOGY ASIA PTE LTD
- Vishay Intertechnologies
- Vishay General Semiconductor - Diodes Division
- Vishay Semiconductor Opto Division
- VSHAY
- VISH/IR
- VSHY
- VSH
- VISHAY INTERTECHNOLOGY ASIA PT
- VISHAY ELECTRONIC
- VISHAY AMERICAS INC
- Vishay Semiconductor Diodes Division
- VISHAY OPTO
- VISHAY FOIL RESISTORS
- Vishay Polytech
- Vishay Semiconductor
- Vishay Sfernice
- Vishay Siliconix
- Vishay Dale
- Vishay BCcomponents
- Vishay Angstrohm
- Vishay Draloric
Inventory History
3 month trend: +4.08%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
MountSurface Mount
Number of Pins8
Number of Terminals5
Technical
Continuous Drain Current (ID)9 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance11 mΩ
Drain to Source Voltage (Vdss)30 V
Element ConfigurationSingle
Fall Time12 ns
Gate to Source Voltage (Vgs)25 V
Input Capacitance1.1 nF
Max Operating Temperature150 °C
Max Power Dissipation3.7 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation1.5 W
Rds On Max11 mΩ
Rise Time12 ns
Schedule B8541290080
Turn-Off Delay Time25 ns
Turn-On Delay Time20 ns
Dimensions
Height1.04 mm
Length3.05 mm
Width3.05 mm
Compliance
Environmental Classification
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Compliance Statements