Vishay SIS110DN-T1-GE3

Name: Vishay SIS110DN-T1-GE3
Brand: Vishay
SKU: SIS110DN-T1-GE3

Single N-Channel 100 V 54 mOhm SMT TrenchFET® Power Mosfet - PowerPAK 1212-8

$ 0.357

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Distributor		SKU		Min	Pkg
Avnet		SIS110DN-T1-GE3	6,000	3K						0.264	1d
Newark	2	SIS110DN-T1-GE3	25,704	1	Cut Tape	1.050	0.659	0.435	0.307	0.307
Arrow Electronics		SIS110DN-T1-GE3	3,000	3K						0.245
Verical		SIS110DN-T1-GE3	3,000	3K						0.244
DigiKey	3	SIS110DN-T1-GE3CT-ND	16,821	1	Cut Tape	1.250	0.784	0.515	0.362	0.362

Inventory History

3 month trend: -17.99%

CAD Models

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Alternate Parts

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Datasheets & Documents

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IHS

Datasheet9 pages5 years ago

Future Electronics

Inventory History

3 month trend:

-17.99%

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Lifecycle StatusProduction (Last Updated: 4 months ago)

Descriptions

Descriptions of Vishay SIS110DN-T1-GE3 provided by its distributors.

Single N-Channel 100 V 54 mOhm SMT TrenchFET® Power Mosfet - PowerPAK 1212-8

Future Electronics

Trans MOSFET N-CH 100V 14.2A 8-Pin PowerPAK 1212 EP T/R

Verical

Vishay Siliconix NMOS TrenchFET, Vds=100 V, 14.2 A, PowerPAK 1212-8, , 8

UnikeyIC

Power Field-Effect Transistor, 14.2A I(D), 100V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

IHS

MOSFET N-CH 100V 5.2A/14.2A PPAK

Vigor Components

MOSFET N-CHAN 100V POWERPAK 1212

YIC International

Mosfet, N-Ch, 100V, 14.2A, 150Deg C, 24W; Transistor Polarity:N Channel; Continuous Drain Current Id:14.2A; Drain Source Voltage Vds:100V; On Resistance Rds(On):0.045Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Rohs Compliant: Yes |Vishay SIS110DN-T1-GE3

Newark