Vishay SIRA12BDP-T1-GE3

Name: Vishay SIRA12BDP-T1-GE3
Brand: Vishay
SKU: SIRA12BDP-T1-GE3

Single N-Channel 30 V 4.3 mOhm SMT TrenchFET® Power Mosfet - PowerPAK SO-8

$ 0.371

Production

Manufacturer Page Datasheet

Price and Stock

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Distributor		SKU		Min	Pkg
Newark	2	SIRA12BDP-T1-GE3	4,959	1	Cut Tape	1.160	0.729	0.479	0.371	0.371
DigiKey	2	SIRA12BDP-T1-GE3CT-ND	2,037	1	Cut Tape	1.210	0.758	0.497	0.349	0.349
Onlinecomponents.com		SIRA12BDP-T1-GE3	5,073	150	Bulk				0.443	0.418
TTI		SIRA12BDP-T1-GE3	6,000	3K	Tape & Reel					0.246	3d
TME	2	SIRA12BDP-T1-GE3	0	1		1.092	0.686	0.572	0.572	0.572	1d

Inventory History

3 month trend: -13.35%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

0 parts available

Datasheets & Documents

Download datasheets and manufacturer documentation for Vishay SIRA12BDP-T1-GE3.

IHS

Datasheet13 pages2 years ago

JRH Electronics

Future Electronics

Inventory History

3 month trend:

-13.35%

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CAD Models

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Supply Chain

Country of OriginTaiwan

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2018-03-26

Lifecycle StatusProduction (Last Updated: 4 months ago)

Descriptions

Descriptions of Vishay SIRA12BDP-T1-GE3 provided by its distributors.

Single N-Channel 30 V 4.3 mOhm SMT TrenchFET® Power Mosfet - PowerPAK SO-8

Future Electronics

Trans MOSFET N-CH 30V 60A 8-Pin PowerPAK SO EP

Verical

MOSFET N-CH 30V 27A/60A PPAK SO8 / N-Channel 30 V 27A (Ta), 60A (Tc) 5W (Ta), 38W (Tc) Surface Mount PowerPAK® SO-8

Win Source

5W(Ta),38W(Tc) 20V,16V 2.4V@ 250¦ÌA 32nC@ 10 V 1N 30V 4.3m¦¸@ 10A,10V 27A,60A 1.47nF@15V SOIC-8 5.99mm*5mm*1.07mm

Unikeyic (ICkey)

Power Field-Effect Transistor, 60A I(D), 30V, 0.0043ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

IHS

Vishay SiRA12BDP-T1-GE3 MOSFET

RS APAC

MOSFET N-CH 30V 27A/60A PPAK SO8

Vigor Components

MOSFET, N-CH, 30V, 60A, 150DEG C, 38W; Transistor Polarity: N Channel; Continuous Drain Current Id: 60A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0027ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.4V; Power Dissipation Pd: 38W; Transistor Case Style: PowerPAK SO; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: TrenchFET Gen IV Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

Farnell