Vishay SI3812DV-T1
Obsolete
Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2003-08-18
Lifecycle StatusObsolete (Last Updated: 5 months ago)
LTB Date2008-05-06
LTD Date2008-11-06
Descriptions
Descriptions of Vishay SI3812DV-T1 provided by its distributors.
Small Signal Field-Effect Transistor, 2A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
N-Channel MOSFETs 20V 2.4A 1.15
OBSOLETE - USE SI3812DV-T1-E3
MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:20V; Continuous Drain Current, Id:2.4A; On-Resistance, Rds(on):125mohm; Rds(on) Test Voltage, Vgs:4.5V; Package/Case:6-TSOP; Leaded Process Compatible:No RoHS Compliant: No
Manufacturer Aliases
Vishay has several brands around the world that distributors may use as alternate names. Vishay may also be known as the following names:
- VIS
- VISH
- VISHAY INTERTECHNOLOGY INC
- Vishay Thin Film
- Vishay Intertechnology
- VISHA
- Vishay Semiconductors
- VISAHY
- Vishay Intertech
- VISHY
- VISHAY INTERTECHNOLOGY ASIA PTE LTD
- Vishay Intertechnologies
- Vishay General Semiconductor - Diodes Division
- Vishay Semiconductor Opto Division
- VSHAY
- VISH/IR
- VSHY
- VSH
- VISHAY INTERTECHNOLOGY ASIA PT
- VISHAY ELECTRONIC
- VISHAY AMERICAS INC
- Vishay Semiconductor Diodes Division
- VISHAY OPTO
- Vishay Techno
- VISHAY FOIL RESISTORS
- Vishay Semiconductor
- Vishay Sfernice
- Vishay Siliconix
- Vishay Dale
- Vishay BCcomponents
- Vishay Angstrohm
- Vishay Draloric
Technical Specifications
Physical
Case/PackageTSOP
Number of Pins6
Number of Terminals6
Technical
Continuous Drain Current (ID)2 A
Drain to Source Breakdown Voltage20 V
Drain to Source Resistance125 mΩ
Element ConfigurationSingle
Fall Time30 ns
Gate to Source Voltage (Vgs)12 V
Max Operating Temperature150 °C
Max Power Dissipation1.15 W
Min Breakdown Voltage20 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation830 mW
Rise Time30 ns
Turn-Off Delay Time14 ns
Voltage Rating (DC)20 V