Vishay SI2308DS

Name: Vishay SI2308DS
Brand: Vishay
SKU: SI2308DS

Power Field-Effect Transistor, 2A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET

Obsolete

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Distributor		SKU		Min	Pkg
Farnell	2	SI2308DS	0	5	Cut Tape		0.672*	0.390*	0.296*	0.262*	7h
element14 APAC	2	SI2308DS	0	1	Cut Tape	0.778*	0.556*	0.442*	0.311*	0.295*	21h
Aztech		SI2308DS	815			13.540	13.540	13.540	13.540	13.540	3h
Anlinkda		SI2308DS	44,765			0.357	0.319	0.268	0.268	0.258	6h
RC Electronics		SI2308DS	40,214	1		0.260	0.230	0.210	0.200	0.200	1d

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Alternate Parts

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Datasheets & Documents

Download datasheets and manufacturer documentation for Vishay SI2308DS.

IHS

Datasheet4 pages26 years ago

Datasheet4 pages25 years ago

Farnell

Newark

Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date1998-06-15

Lifecycle StatusObsolete (Last Updated: 3 weeks ago)

LTB Date2010-11-04

LTD Date2011-05-04

Descriptions

Descriptions of Vishay SI2308DS provided by its distributors.

Power Field-Effect Transistor, 2A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET

IHS

SI2308DS VISHAY

YIC International

MOSFET, N, SOT-23; Transistor Polarity:N Channel; Continuous Drain Current Id:2A; Drain Source Voltage Vds:60V; On Resistance Rds(on):160mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:1.25W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOT-23; No. of Pins:3; SVHC:No SVHC (15-Dec-2010); Current Id Max:2A; Current Temperature:25°C; Device Marking:SI2308DS; External Depth:2.5mm; External Length / Height:1.12mm; External Width:3.05mm; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:SOT-23; Power Dissipation Pd:1.25W; Power Dissipation Pd:1.25W; Pulse Current Idm:10A; SMD Marking:A8; Tape Width:8mm; Termination Type:SMD; Voltage Vds Typ:60V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Min:1.5V

element14 APAC