Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2000-02-08
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2014-06-05
LTD Date2014-12-05
Descriptions
Descriptions of Vishay SI1903DL-T1-E3 provided by its distributors.
Trans MOSFET P-CH 20V 0.41A 6-Pin SC-70 T/R
Small Signal Field-Effect Transistor, 0.41A I(D), 20V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET 2P-CH 20V 0.41A SC70-6
DUAL P-CH 2.5V (G-S) TRENCH
Dual MOSFETs 20V 0.44A
20V, 995 MOHMS@4.5V, DUAL
MOSFET 20V 0.44A
MOSFET TRANSISTOR; Transistor Polarity:P Channel; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs Typ:-1.5V; Power Dissipation Pd:300mW; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SC-70; No. of Pins:6; Continuous Drain Current Id:410mA; Current Id Max:440mA; Drain Source Voltage Vds:-20V; Module Configuration:Dual; On Resistance Rds(on):995mohm; Package / Case:6-SC-70; Power Dissipation Pd:300mW; Voltage Vds Typ:-20V; Voltage Vgs Max:12V; Voltage Vgs Rds on Measurement:-4.5V
Manufacturer Aliases
Vishay has several brands around the world that distributors may use as alternate names. Vishay may also be known as the following names:
- VIS
- VISH
- VISHAY INTERTECHNOLOGY INC
- Vishay Thin Film
- Vishay Intertechnology
- VISHA
- Vishay Semiconductors
- VISAHY
- Vishay Intertech
- VISHY
- VISHAY INTERTECHNOLOGY ASIA PTE LTD
- Vishay Intertechnologies
- Vishay General Semiconductor - Diodes Division
- Vishay Semiconductor Opto Division
- VSHAY
- VISH/IR
- VSHY
- VSH
- VISHAY INTERTECHNOLOGY ASIA PT
- VISHAY ELECTRONIC
- VISHAY AMERICAS INC
- Vishay Semiconductor Diodes Division
- VISHAY OPTO
- VISHAY FOIL RESISTORS
- Vishay Polytech
- Vishay Semiconductor
- Vishay Sfernice
- Vishay Siliconix
- Vishay Dale
- Vishay BCcomponents
- Vishay Angstrohm
- Vishay Draloric
Technical Specifications
Physical
Case/PackageSC
MountSurface Mount
Number of Pins6
Number of Terminals6
Technical
Continuous Drain Current (ID)410 mA
Drain to Source Breakdown Voltage20 V
Drain to Source Resistance995 mΩ
Drain to Source Voltage (Vdss)-20 V
Element ConfigurationDual
Fall Time20 ns
Gate to Source Voltage (Vgs)12 V
Max Operating Temperature150 °C
Max Power Dissipation300 mW
Min Breakdown Voltage20 V
Min Operating Temperature-55 °C
Nominal Vgs-1.5 V
Number of Elements2
Power Dissipation270 mW
Rds On Max995 mΩ
Resistance995 mΩ
Rise Time20 ns
Threshold Voltage-1.5 V
Turn-Off Delay Time8.5 ns
Turn-On Delay Time7.5 ns
Compliance
Environmental Classification
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Compliance Statements