Vishay IRF840PBF

Name: Vishay IRF840PBF
Brand: Vishay
SKU: IRF840PBF

IRF840PBF N-channel Mosfet Transistor, 8 A, 500 V, 3-PIN TO-220AB

$ 0.85

Production

Manufacturer Page Datasheet

Price and Stock

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Distributor		SKU		Min	Pkg
Avnet	2	IRF840PBF	21,296	1		1.125	1.071	1.059	1.059	1.059	23h
Newark	2	IRF840PBF	21,296	1		1.950	1.810	1.550	1.440	1.410
Verical	2	IRF840PBF	735	8			0.752	0.752	0.752	0.752
Arrow Electronics		IRF840PBF	735	1		0.752	0.752	0.752	0.752	0.752
Future Electronics	3	IRF840PBF	26,343	30	Tube			0.735	0.700	0.650

Inventory History

3 month trend: -14.96%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

0 parts available

Datasheets & Documents

Download datasheets and manufacturer documentation for Vishay IRF840PBF.

IHS

Datasheet7 pages2 years ago

Datasheet9 pages14 years ago

Upverter

Newark

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Future Electronics

Inventory History

3 month trend:

-14.96%

CAD Models

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Supply Chain

Country of OriginIsrael

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date1997-07-09

Lifecycle StatusProduction (Last Updated: 4 months ago)

LTB Date2008-06-30

LTD Date2008-09-30

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Descriptions

Descriptions of Vishay IRF840PBF provided by its distributors.

IRF840PBF N-CHANNEL MOSFET TRANSISTOR, 8 A, 500 V, 3-PIN TO-220AB

RS (Formerly Allied Electronics)

MOSFET N-CH 500V 8A TO-220AB / Trans MOSFET N-CH 500V 8A 3-Pin(3+Tab) TO-220AB

Win Source

Tube Through Hole N-Channel Single Mosfet Transistor 8A Tc 8A 125W 20ns

Fly-Wing Technology

Single N-Channel 500 V 0.85 O Flange Mount Power Mosfet - TO-220

Future Electronics

Power MOSFET, N Channel, 500 V, 8 A, 0.85 ohm, TO-220AB, Through Hole

Avnet

125W(Tc) 20V 4V@ 250¦ÌA 63nC@ 10 V 1N 500V 850m¦¸@ 4.8A,10V 8A 1.3nF@25V TO-220AB 9.14mm

UnikeyIC

Power MOSFET Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

ComSIT Distribution GmbH

MOSFET, N, 500V, 8A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:8A; Drain Source Voltage Vds:500V; On Resistance Rds(on):850mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:125W; Transistor Case Style:TO-220AB; No. of Pins:3; Current Id Max:8A; Junction to Case Thermal Resistance A:1°C/W; Package / Case:TO-220AB; Power Dissipation Pd:125W; Power Dissipation Pd:125W; Pulse Current Idm:32A; Termination Type:Through Hole; Voltage Vds Typ:500V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V

element14 APAC