onsemi FCP7N60

Name: onsemi FCP7N60
Brand: onsemi
SKU: FCP7N60

N-Channel Power MOSFET, SUPERFET®, Easy Drive, 600 V, 7 A, 600 mΩ, TO-220

$ 1.294

Production

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Distributor	SKU		Min	Pkg
DigiKey	FCP7N60OS-ND	1,570	1	Tube	3.550	3.550	1.620	1.224	1.154
Newark	FCP7N60	0	200					1.750	1.750
Onlinecomponents.com	FCP7N60	0	250	Bulk				1.270	1.270
Future Electronics	FCP7N60	0	1K	Tube				2.090	2.060
Avnet	FCP7N60	0	1K					1.318	1.183	6h

Inventory History

3 month trend: +15.88%

CAD Models

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Alternate Parts

0 parts available

Datasheets & Documents

Download datasheets and manufacturer documentation for onsemi FCP7N60.

Master Electronics

Datasheet0 pages0 years ago

IHS

onsemi

Fairchild Semiconductor

Farnell

Inventory History

3 month trend:

+15.88%

CAD Models

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Supply Chain

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date2005-02-04

Lifecycle StatusProduction (Last Updated: 5 years ago)

Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)

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Descriptions

Descriptions of onsemi FCP7N60 provided by its distributors.

N-Channel Power MOSFET, SUPERFET®, Easy Drive, 600 V, 7 A, 600 mΩ, TO-220

onsemi

Power Field-Effect Transistor, 7A I(D), 600V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

IHS

MOSFET, N, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:7A; Drain Source Voltage Vds:600V; On Resistance Rds(on):530mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:83W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:7A; Package / Case:TO-220AB; Power Dissipation Pd:83W; Power Dissipation Pd:83W; Pulse Current Idm:30A; Termination Type:Through Hole; Voltage Vds Typ:600V; Voltage Vgs Max:5V; Voltage Vgs Rds on Measurement:10V

element14 APAC

SuperFET® MOSFET is Fairchild Semiconductor’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.

Fairchild Semiconductor