onsemi FQP8N60C

Name: onsemi FQP8N60C
Brand: onsemi
SKU: FQP8N60C

Power Mosfet, N-channel, Qfet®, 600 V, 7.5 A, 1.2 Ω, TO-220

$ 1.085

Obsolete

Manufacturer Page Datasheet

Price and Stock

Authorized Distributors

Non-Authorized Stocking Distributors

Non-Authorized Dealers

See all price breaks

Distributor		SKU		Min
Avnet		FQP8N60C	918	962				1.196	1.177	4d
Verical		FQP8N60C	4,800	320				0.974	0.869
Rochester Electronics	2	FQP8N60C	5,143				0.939	0.780	0.695	10h
Flip Electronics		FQP8N60C	918							5d
element14 APAC		FQP8N60C.	0	1	2.699*	1.888*	1.537*	1.318*	1.318*	1d

Inventory History

3 month trend: -0.03%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

0 parts available

Datasheets & Documents

Download datasheets and manufacturer documentation for onsemi FQP8N60C.

IHS

Datasheet8 pages12 years ago

Newark

element14 APAC

Future Electronics

onsemi

Inventory History

3 month trend:

-0.03%

CAD Models

Download onsemi FQP8N60C symbol, footprint, and 3D STEP models from our trusted partners.

source	eCAD	mCAD	FILES
SnapEDA	Footprint		Download
Ultra Librarian	SymbolFootprint		Download

The partner site will open in a new tab when downloading their CAD models

By downloading CAD models from Octopart, you agree to our Terms & Conditions and Privacy Policy.

Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date2003-05-21

Lifecycle StatusObsolete (Last Updated: 1 day ago)

LTB Date2011-12-13

LTD Date2012-06-13

Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 1 day ago)

Related Parts

VishayIRF840APBF

Transistor MOSFET N-CH 500V 8A 3-Pin (3+Tab) TO-220AB

Details

VishayIRFBC40APBF

Single N-Channel 600 V 1.2 Ohms Flange Mount Power Mosfet - TO-220AB

Details

VishayIRFB9N65APBF

Single N-Channel 650 V 0.93 Ohms Flange Mount Power Mosfet - TO-220-3

Details

onsemiFQP10N60C

Trans MOSFET N-CH 600V 9.5A 3-Pin (3+Tab) TO-220 Rail

Details

onsemiFCP7N60

N-Channel Power MOSFET, SUPERFET®, Easy Drive, 600 V, 7 A, 600 mΩ, TO-220

Details

Descriptions

Descriptions of onsemi FQP8N60C provided by its distributors.

Power MOSFET, N-Channel, QFET®, 600 V, 7.5 A, 1.2 Ω, TO-220

onsemi

Trans MOSFET N-CH 600V 7.5A 3-Pin(3+Tab) TO-220AB Rail

Verical

147W(Tc) 30V 4V@ 250¦ÌA 36nC@ 10 V 1N 600V 1.2¦¸@ 3.75A,10V 7.5A 1.255nF@25V TO-220-3 9.4mm

UnikeyIC

Power Field-Effect Transistor, 7.5A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Semicontronic

MOSFET, N, TO-220; Transistor Polarity: N Channel; Continuous Drain Current Id: 7.5A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 1ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd:

Farnell

Mosfet, N, To-220; Transistor, Polaridad:Canal N; Intensidad Drenador Continua Id:7.5A; Tensión Drenaje-Fuente Vds:600V; Resistencia De Activación Rds(On):1Ohm; Tensión Vgs De Medición Rds(On):10V; Tensión Umbral Vgs:4V |Onsemi FQP8N60C.

Newark

These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for highefficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.

Fairchild Semiconductor