Vishay IRF644SPBF

Name: Vishay IRF644SPBF
Brand: Vishay
SKU: IRF644SPBF

Trans MOSFET N-CH 250V 14A 3-Pin(2+Tab) D2PAK

$ 1.693

Production

Manufacturer Page Datasheet

Price and Stock

Authorized Distributors

Non-Authorized Stocking Distributors

Non-Authorized Dealers

See all price breaks

Distributor	SKU		Min	Pkg
Newark	IRF644SPBF	1,362	1		4.620	2.390	2.090	1.740	1.740
Arrow Electronics	IRF644SPBF	160	1		3.473	2.366	2.346	2.346	2.346
Verical	IRF644SPBF	160	4			0.947	0.873	0.873	0.873
DigiKey	IRF644SPBF-ND	218	1	Tube	5.030	5.030	2.365	1.820	1.686
TTI	IRF644SPBF	1,100	50	Tube			1.620	1.620	1.620	1h

Inventory History

3 month trend: -22.37%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

1 part available

Datasheets & Documents

Download datasheets and manufacturer documentation for Vishay IRF644SPBF.

Newark

Datasheet10 pages5 years ago

Datasheet10 pages14 years ago

Datasheet9 pages10 years ago

Datasheet8 pages16 years ago

Datasheet9 pages11 years ago

Farnell

TME

Future Electronics

RS (Formerly Allied Electronics)

Inventory History

3 month trend:

-22.37%

CAD Models

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Alternate Parts

This Part

Alternate Parts

VishayIRF644SPBF

VishayIRF644STRRPBF

Price @ 1000

$ 1.693

$ 1.68

Stock

145,971

97,911

Authorized Distributors

Mount

Surface Mount

Case/Package

D2PAK

TO-263-3

Drain to Source Voltage (Vdss)

250 V

Continuous Drain Current (ID)

14 A

Threshold Voltage

4 V

Rds On Max

280 mΩ

Gate to Source Voltage (Vgs)

20 V

Power Dissipation

3.1 W

Input Capacitance

1.3 nF

Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date1994-02-01

Lifecycle StatusProduction (Last Updated: 4 months ago)

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Descriptions

Descriptions of Vishay IRF644SPBF provided by its distributors.

Trans MOSFET N-CH 250V 14A 3-Pin(2+Tab) D2PAK

Verical

IRF644S Series N-Channel 250 V 280 mOhm Surface Mount Power Mosfet - TO-263

Future Electronics

MOSFET N-CH 250V 14A D2PAK | Siliconix / Vishay IRF644SPBF

RS (Formerly Allied Electronics)

POWER MOSFET Power Field-Effect Transistor, 14A I(D), 250V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

ComSIT Distribution GmbH

Transistor Polarity:n Channel; Drain Source Voltage Vds:250V; Continuous Drain Current Id:14A; On Resistance Rds(On):0.28Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Product Range:- Rohs Compliant: No

Newark

Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 14 / Drain-Source Voltage (Vds) V = 250 / ON Resistance (Rds(on)) mOhm = 280 / Gate-Source Voltage V = 20 / Fall Time ns = 49 / Rise Time ns = 24 / Turn-OFF Delay Time ns = 53 / Turn-ON Delay Time ns = 11 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = DDPAK / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Power Dissipation (Pd) W = 125

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