Toshiba GT30J121
Production
Inventory History
3 month trend: +0.00%
CAD Models
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Alternate Parts
0 parts available
CAD Models
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Descriptions
Descriptions of Toshiba GT30J121 provided by its distributors.
Trans IGBT Chip N-CH 600V 30A 3-Pin(3+Tab) TO-3PN
Insulated Gate Bipolar Transistor, 30A I(C), 600V V(BR)CES, N-Channel
IGBT N-Ch 600V 30A Enhancement TO3PN
GT30J121 ¶«Ö¥ TO-247
TOSHIBA TO-3P
Manufacturer Aliases
Toshiba has several brands around the world that distributors may use as alternate names. Toshiba may also be known as the following names:
- TOSH
- TOS
- Toshiba Semiconductor and Storage
- TOSHIB
- SMK
- TOSHIBA CORP
- TOSHI
- TSENG
- TOSHIBA CORPORATION
- Toshiba America Electronic Components
- TSH
- Toshiba Memory America Inc
- MARKTECH OPTOELECTRONICS
- TOSHIBA ELECTRONICS
- Toshiba Electronic Devices and Storage Corporation
- Toshiba America
- TOSHIBA ELECTRONIC COMPONENTS
- Toshiba Semiconductor
- Toshiba Lifestyle Products
- Toshiba America Electronic Components Inc
- TOSHIBA-PB FREE
- TOSHIBA SEMI
- TOSHIBAPb
- TOBHIBA
- TOSHBA
Inventory History
3 month trend: +0.00%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Collector Emitter Voltage (VCEO)600 V
Element ConfigurationSingle
Max Collector Current30 A
Max Operating Temperature150 °C
Max Power Dissipation170 W
Number of Elements1
Dimensions
Height20 mm
Length15.9 mm
Width4.8 mm