STMicroelectronics STW55NM60ND
$ 16.219
Obsolete
Datasheets & Documents
Download datasheets and manufacturer documentation for STMicroelectronics STW55NM60ND.
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Descriptions
Descriptions of STMicroelectronics STW55NM60ND provided by its distributors.
Mosfet Transistor, N Channel, 51 A, 600 V, 0.047 Ohm, 10 V, 4 V Rohs Compliant: Yes
N-channel 600 V, 0.047 Ohm, 51 A TO-247 FDmesh(TM) II Power MOSFET (with fast diode)
N-Channel 600 V 60 mOhm Flange Mount FDmesh II Power Mosfet - TO-247
Power MOSFET, N Channel, 650 V, 51 A, 60 Milliohms, TO-247, 3 Pins, Through Hole
STW55NM60ND N-CHANNEL MOSFET TRANSISTOR, 51 A, 600 V, 3-PIN TO-247
Trans MOSFET N-CH 600V 51A Automotive 3-Pin(3+Tab) TO-247 Tube
Power Field-Effect Transistor, 51A I(D), 600V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC
MOSFET, N CH, 600V, 51A, TO 247; Transistor Polarity: N Channel; Continuous Drain Current Id: 51A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.047ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Powe
Manufacturer Aliases
STMicroelectronics has several brands around the world that distributors may use as alternate names. STMicroelectronics may also be known as the following names:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
Technical Specifications
Physical
Case/PackageTO-247
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)51 A
Drain to Source Breakdown Voltage600 V
Drain to Source Resistance60 mΩ
Drain to Source Voltage (Vdss)600 V
Element ConfigurationSingle
Fall Time96 ns
Gate to Source Voltage (Vgs)25 V
Input Capacitance5.8 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation350 W
Min Breakdown Voltage600 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation350 W
Rds On Max60 mΩ
Resistance60 MΩ
Rise Time68 ns
Threshold Voltage4 V
Turn-Off Delay Time188 ns
Turn-On Delay Time33 ns
Dimensions
Height24.45 mm
Length15.75 mm
Width5.15 mm
Datasheets & Documents
Download datasheets and manufacturer documentation for STMicroelectronics STW55NM60ND.
Compliance
Environmental Classification
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant